The Latin America, Middle East and Africa Gate Driver ICs Market would witness market growth of 7.8% CAGR during the forecast period (2023-2030). In the year 2026, the LAMEA market's volume is expected to surge to 77.7 million units, showcasing a growth of 15.8% (2023-2030).
The adoption of wide bandgap semiconductors such as SiC and GaN is gaining traction due to their superior performance characteristics, including higher efficiency, faster switching speeds, and reduced losses compared to traditional silicon-based devices. Gate driver ICs tailored for wide bandgap semiconductors are emerging to address the specific requirements of these advanced power electronics applications. Additionally, these incorporate advanced protection features to safeguard against over-voltage, over-current, short-circuit, and over-temperature conditions.
Robust fault detection mechanisms and comprehensive protection schemes ensure the reliability and longevity of power electronics systems, minimizing the risk of component damage and system downtime. Digital gate driver solutions are gaining popularity for their flexibility, configurability, and programmability. Moreover, digital gate driver ICs leverage digital signal processing (DSP) techniques to enable adaptive control algorithms, dynamic parameter adjustment, and real-time monitoring capabilities, offering greater flexibility and customization options for diverse application requirements.
Due to the adoption of electric vehicles in the UAE, there will be a corresponding increase in the demand for EV components, including these. These ICs are crucial for controlling the power electronics systems within EVs, including motor drives, battery management systems, and power inverters. The International Trade Administration (ITA) reports that the Dubai Roads and Transport Authority (RTA) effectively implemented a hybrid vehicle conversion program for 50% of the taxi fleet in Dubai. Therefore, the expansion of the EV sector, rising renewable energy generation, and growing smart devices sector are propelling factors of the market in the region.
The Brazil market dominated the LAMEA Gate Driver ICs Market, By Country in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $47 Million by 2030. The Argentina market is showcasing a CAGR of 8.4% during (2023 - 2030). Additionally, The UAE market would register a CAGR of 7.5% during (2023 - 2030).
Based on Transistor Type, the market is segmented into MOSFET, and IGBT. Based on Semiconductor Material, the market is segmented into SiC, and GaN. Based on Mode of Attachment, the market is segmented into On-chip, and Discrete. Based on Application, the market is segmented into Industrial, Commercial, and Residential. Based on countries, the market is segmented into Brazil, Argentina, UAE, Saudi Arabia, South Africa, Nigeria, and Rest of LAMEA.
The adoption of wide bandgap semiconductors such as SiC and GaN is gaining traction due to their superior performance characteristics, including higher efficiency, faster switching speeds, and reduced losses compared to traditional silicon-based devices. Gate driver ICs tailored for wide bandgap semiconductors are emerging to address the specific requirements of these advanced power electronics applications. Additionally, these incorporate advanced protection features to safeguard against over-voltage, over-current, short-circuit, and over-temperature conditions.
Robust fault detection mechanisms and comprehensive protection schemes ensure the reliability and longevity of power electronics systems, minimizing the risk of component damage and system downtime. Digital gate driver solutions are gaining popularity for their flexibility, configurability, and programmability. Moreover, digital gate driver ICs leverage digital signal processing (DSP) techniques to enable adaptive control algorithms, dynamic parameter adjustment, and real-time monitoring capabilities, offering greater flexibility and customization options for diverse application requirements.
Due to the adoption of electric vehicles in the UAE, there will be a corresponding increase in the demand for EV components, including these. These ICs are crucial for controlling the power electronics systems within EVs, including motor drives, battery management systems, and power inverters. The International Trade Administration (ITA) reports that the Dubai Roads and Transport Authority (RTA) effectively implemented a hybrid vehicle conversion program for 50% of the taxi fleet in Dubai. Therefore, the expansion of the EV sector, rising renewable energy generation, and growing smart devices sector are propelling factors of the market in the region.
The Brazil market dominated the LAMEA Gate Driver ICs Market, By Country in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $47 Million by 2030. The Argentina market is showcasing a CAGR of 8.4% during (2023 - 2030). Additionally, The UAE market would register a CAGR of 7.5% during (2023 - 2030).
Based on Transistor Type, the market is segmented into MOSFET, and IGBT. Based on Semiconductor Material, the market is segmented into SiC, and GaN. Based on Mode of Attachment, the market is segmented into On-chip, and Discrete. Based on Application, the market is segmented into Industrial, Commercial, and Residential. Based on countries, the market is segmented into Brazil, Argentina, UAE, Saudi Arabia, South Africa, Nigeria, and Rest of LAMEA.
List of Key Companies Profiled
- Infineon Technologies AG
- Mitsubishi Electric Corporation
- NXP Semiconductors N.V.
- Rohm Co., Ltd.
- STMicroelectronics N.V.
- Toshiba Corporation
- Semtech Corporation
- Microchip Technology Incorporated
- ON Semiconductor Corporation
- Renesas Electronics Corporation
Market Report Segmentation
By Transistor Type (Volume, Million Units, USD Billion, 2019-2030)- MOSFET
- IGBT
- SiC
- GaN
- On-chip
- Discrete
- Industrial
- Commercial
- Residential
- Brazil
- Argentina
- UAE
- Saudi Arabia
- South Africa
- Nigeria
- Rest of LAMEA
Table of Contents
Chapter 1. Market Scope & Methodology
Chapter 2. Market at a Glance
Chapter 3. Market Overview
Chapter 4. Competition Analysis - Global
Chapter 5. LAMEA Gate Driver ICs Market, By Transistor Type
Chapter 6. LAMEA Gate Driver ICs Market, By Semiconductor Material
Chapter 7. LAMEA Gate Driver ICs Market, By Mode of Attachment
Chapter 8. LAMEA Gate Driver ICs Market, By Application
Chapter 9. LAMEA Gate Driver ICs Market, By Country
Chapter 10. Company Profiles
Companies Mentioned
- Infineon Technologies AG
- Mitsubishi Electric Corporation
- NXP Semiconductors N.V.
- Rohm Co., Ltd.
- STMicroelectronics N.V.
- Toshiba Corporation
- Semtech Corporation
- Microchip Technology Incorporated
- ON Semiconductor Corporation
- Renesas Electronics Corporation
Methodology
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