- Language: English
- 832 Pages
- Published: June 2011
Fundamentals of RF and Microwave Transistor Amplifiers
- Published: June 2009
- Region: World
- 696 Pages
- John Wiley and Sons Ltd
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers
This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations.
Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions.
With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Chapter 1: Introduction.
1.1 Transistor Amplifier.
1.2 Early History of Transistor Amplifiers.
1.3 Benefits of Transistor Amplifiers.
1.5 Design of Amplifiers.
1.6 Amplifier Manufacturing Technologies.
1.7 Applications of Amplifiers.
1.8 Amplifier Cost.
1.9 Current Trends.
1.10 Book Organization.
Chapter 2: Linear Network Analysis.
2.1 Impedance Matrix.
2.2 Admittance Matrix.
2.3 ABCD Parameters.
2.5 Relationships Between Various 2-Port Parameters.
Chapter 3: Amplifier Characteristics and Definitions.
3.2 Power Gain.
3.3 Input and Output VSWR.
3.4 Output Power.
3.5 Power Added Efficiency.
3.6 Intermodulation Distortion.
3.7 Harmonic Power.
3.8 Peak-to-Average Ratio.
3.9 Combiner Efficiency.
3.10 Noise Characterization.
3.11 Dynamic Range.
3.12 Multi-Stage Amplifier Characteristics.
3.13 Gate and Drain Pushing Factors.
3.14 Amplifier Temperature Coefficient.
3.15 Mean Time To Failure.
Chapter 4: Transistors.
4.1 Transistor Types.
4.2 Si Bipolar Transistor.
4.3 GaAs MESFET.
4.4 Hetrojunction Field Effect Transistor.
4.5 Hetrojunction BipolarTransistors.
Chapter 5: Transistor Models.
5.1 Transistor Model Types.
5.2 MESFET Models.
5.3 pHEMT Models.
5.4 HBT Model.
5.5 MOSFET Models.
5.6 BJT Models.
5.7 Transistor Model Scaling.
5.8 Source- and Load-Pull Data.
5.9 Temperature Dependent Models.
Chapter 6: Matching Network Components.
6.1 Impedance Matching Elements.
6.2 Transmission Lines Matching Elements.
6.3 Lumped Elements.
6.4 Bond Wire Inductors.
6.5 Broadband Inductors.
Chapter 7: Impedance Matching Techniques.
7.1 One-Port and Two-Port Networks.
7.2 Narrowband Matching Techniques.
7.3 Wideband Matching Techniques.
Chapter 8: Amplifier Classes and Analyses.
8.1 Classes of Amplifiers.
8.2 Analysis of Class-A Amplifiers.
8.3 Analysis of Class-B Amplifiers.
8.4 Analysis of Class-C Amplifiers.
8.5 Analysis of Class-E Amplifiers.
8.6 Analysis of Class-F Amplifiers.
8.7 Comparison Between Various Amplifier Classes.
Chapter 9: Amplifier Design Methods.
9.1 Amplifier Design.
9.2 Amplifier Design techniques.
9.3 Matching Networks.
9.4 Amplifier Design Examples.
9.5 Silicon Based Handset Amplifier Design.
Chapter 10: High-Efficiency Amplifier Techniques.
10.1 High-Efficiency Design.
10.2 Harmonic Reaction Amplifier.
10.3 Harmonic Injection Technique.
10.4 Harmonic Control Amplifier.
10.5 High-PAE Design Considerations.
Chapter 11: Broadband Amplifier Techniques.
11.1 Transistor Bandwidth Limitations.
11.2 Broadband Amplifier Techniques.
11.3 Broadband Power Amplifier Design Considerations.
Chapter 12: Linearization Techniques.
12.1 Nonlinear Analysis.
12.2 Phase Distortion.
12.3 Linearization of Power Amplifiers.
12.4 Efficiency Enhancement Techniques for Linear Amplifiers.
12.5 Linear Amplifier Design Considerations.
12.6 Linear Amplifier Design Examples.
Chapter 13: High-Voltage Power Amplifier Design.
13.1 Performance Overview of High-Voltage Transistors.
13.2 High-Voltage Transistors.
13.3 High-Power Amplifier Design Considerations.
13.4 Power Amplifier Design Examples.
13.5 Broadband HV Amplifiers.
13.6 Series FET Amplifiers.
Chapter 14: Hybrid Amplifiers.
14.1 Hybrid Amplifier Technologies.
14.2 Printed Circuit Boards.
14.3 Hybrid Integrated Circuits.
14.4 Design of Internally Matched Power Amplifiers.
14.5 Low-Noise Amplifiers.
14.6 Power Amplifiers.
Chapter 15: Monolithic Amplifiers.
15.1 Advantages of Monolithic Amplifiers.
15.2 Monolithic IC Technology.
15.3 MMIC Design.
15.4 Design Examples.
15.5 CMOS Fabrication.
Chapter 16: Thermal Design.
16.1 Thermal Basics.
16.2 Transistor Thermal Design.
16.3 Amplifier Thermal Design.
16.4 Pulsed Operation.
16.5 Heat Sink Design.
16.6 Thermal Resistance Measurement.
Chapter 17: Stability Analyses.
17.1 Even-Mode Oscillations.
17.2 Odd-Mode Oscillations.
17.3 Parametric Oscillations.
17.4 Spurous Parametric Oscillations.
17.5 Low-Frequency Oscillations.
Chapter 18: Biasing Networks.
18.1 Biasing of Transistors.
18.2 Biasing Network Design Considerations.
18.3 Self-Bias Technique.
18.4 Biasing Multi-Stage Amplifiers.
18.5 Biasing Circuitry for Low-Frequency Stabilization.
18.6 Biasing Sequence.
Chapter 19: Power Combining.
19.1 Device-Level Power Combining.
19.2 Circuit-Level Power Combining.
19.3 Power Dividers, Hybrids and Couplers.
19.4 N-Way Combiners.
19.5 Corporate Structures.
19.6 Power Handling of Isolation Resistors.
19.7 Spatial Power Combiners.
19.8 Comparison of Power Combining Schemes.
Chapter 20: Integrated Function Amplifiers.
20.1 Integrated limiter/LNA.
20.2 Transmitter Chain.
20.3 Cascading of Amplifiers.
Chapter 21: Amplifier Packages.
21.1 Amplifier Packaging Overview.
21.2 Materials for Packages.
21.3 Ceramic Package Design.
21.4 Plastic Package Design.
21.5 Package Assembly.
21.6 Thermal Considerations.
21.7 CAD Tools For Packages.
21.8 Power Amplifier Modules.
Chapter 22: Transistor and Amplifier Measurements.
22.1 Transistor Measurements.
22.2 Amplifier Measurements.
22.3 Distortion Measurements.
22.4 Phase Noise Measurement.
22.5 Recovery Time Measurement.
Appendix A: Physical Constants and Other Data.
Appendix B: Units and Symbols.
Appendix C: Frequency Band Designation.
Appendix D: Decibel Units - (dB).
Appendix E: Mathematical Relations.
Appendix F: Smith Chart.
Appendix G: Graphical Symbols.
Appendix H: Acronyms and Abbreviations.
Appendix I: List Of Symbols.
Appendix J: Multiple Access and Modulation Techniques.
Inder J. Bahl, PhD, has been working on microwave and millimeter wave GaAs ICs for more than twenty-five years. He is responsible for the design of over 400 MMICs, including low-noise amplifiers, driver amplifiers, broadband amplifiers, power amplifiers (high-power, high-efficiency, and broadband), dc and ac coupled transimpedance and limiting amplifiers, multi-bit phase shifters, narrow and broadband SPDT switches, redundant switches, programmable attenuators, balanced mixers, quadrature downconverters, upconverters, transmit chips, receive chips and transmit/receive chips. Dr. Bahl has also developed modules consisting of MMICs for PAR and ECM applications.
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