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Gettering and Defect Engineering in Semiconductor Technology XIII
Trans Tech Publications Inc., Feb 2010, Pages: 610
Series: Solid State Phenomena, Volumes 156 - 158
Selected, peer reviewed papers from the XIIIth International Autumn Meeting, Döllnsee-Schorfheide, north of Berlin, Germany, September 26 - October 02, 2009
This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.
The volume comprises 93 contributions; among them, 14 invited papers, from more than 20 different countries. The invited papers, submitted by internationally recognized experts in the field, review the state-of-the-art and likely future trends in their respective research field. Upon comparing this volume with previous volumes, it is clearly seen that defect engineering in photovoltaics is becoming a topic of ever-increasing interest.
The collection is divided into the chapters: - Multi-crystalline silicon for solar cells, - Advanced semiconductor materials: Strained Si, SOI, SiGe, SiC, - Impurities (oxygen, carbon, nitrogen, metals) and point defects in Si and SiGe, - Modeling and simulation of growth, gettering and characterization, - Defect aspects and defect engineering, - Gettering and hydrogen passivation, - Defect and impurity characterization, - Nanostructures and new devices, - Silicon-based opto-electronics and defect luminescence.
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