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Silicon Carbide

  • Published: November 2009
  • 980 Pages
  • John Wiley and Sons Ltd

This work covers the status and upcoming challenges of Silicon Carbide (SiC) Electronics with special attention to industrial application. With a list of contributors reading like the "Who's Who" in SiC R&D, from industrial, governmental and academic research (GE, CREE Inc., Honda, Toshiba, Nissan, Infineon, University of Erlangen–Nurnberg, NASA, Fraunhofer ISE, Naval Research Lab, Rensselaer Polytechnic Institute, Kyoto University), this text strongly benefits from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

VOL 1: Growth, Defects, and Novel Applications 1) Bulk growth of SiC – review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution 2) Bulk and Epitaxial Growth of Micropipe–free Silicon Carbide on Basal and Rhombohedral Plane Seeds 3) Formation of extended defects in 4H–SiC epitaxial growth and development of fast growth technique 4) Fabrication of High Performance 3C–SiC Vertical MOSFETs by Reducing Planar Defects 5) Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches 6) EPR Identification of Intrinsic Defects in 4H–SiC 7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide 8) Optical properties of as–grown and process–induced stack–ing faults in 4H–SiC 9) Characterization of defects in silicon carbide by Raman spectroscopy 10) Lifetime–killing defects in 4H–SiC epilayers and lifetime control by low–energy electron irradiation 11) Identification and carrier dynamics of the dominant lifetime limiting defect in n– 4H–SiC epitaxial layers 12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation 13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H–SiC and their Application to Device Simulation 14) Analysis of interface trap parameters from double–peak conductance spectra taken on N–implanted 3C–SiC MOS capacitors 15) Non–basal plane SiC surfaces: Anisotropic structures and low–dimensional electron systems 16) Comparative Columnar Porous Etching Studies on n–type 6H SiC Crystalline faces 17) Micro– and Nanomechanical Structures for Silicon Carbide MEMS and NEMS 18) Epitaxial Graphene: an new Material 19) Density Functional Study of Graphene Overlayers on SiC VOL 2: Power Devices and Sensors 1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices 2) Silicon Carbide power devices – Status and upcoming challenges with a special attention to industrial application 3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts 4) Reliability aspects of SiC Schottky Diodes 5) Design, process, and performance of all–epitaxial normally–off SiC JFETs 6) Extreme Temperature SiC Integrated Circuit Technology 7) 1200 V SiC Vertical–channel–JFET based cascode switches 8) Alternative techniques to reduce interface traps in n–type 4H–SiC MOS capacitors 9) High electron mobility ahieved in n–channel 4H–SiC MOSFETs oxidized in the presence of nitrogen 10) 4H–SiC MISFETs with Nitrogen–containing Insulators 11) SiC Inversion Mobility 12) Development of SiC diodes, power MOSFETs and intellegent Power Modules 13) Reliability issues of 4H–SiC power MOSFETs toward high junction temperature operation 14) Application of SiC–Transistors in Photovoltaic–Inverters 15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs 16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H–SiC BJTs 17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar–blind light detection

Peter Friedrichs is Managing Director at SiCED, a joint venture between Siemens and Infineon located in Erlangen, Germany. SiCED develops technologies for SiC power semiconductors and systems based on these devices. Their research is devoted to device design and simulation, processing technology as well as the characterization of devices including also end of life tests. Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, Japan, has dedicated his work to research on the growth and characterization of wide bandgap semiconductors, the process technology and physics of SiC devices. He has authored over 300 scientific publications. Lothar Ley is recently retired as Professor of Physics and Head of the Institute of Technical Physics at the University of Erlangen, Germany. From 2002 to 2008 he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) "Silicon carbide as semiconductor material: novel aspects of crystal growth and doping". Alongside its experimental research on SiC, his group currently also works on Diamond, Carbon Nanotubes, and Graphene. He has authored and co–authored over 400 scientific publications. Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi–crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen–Nürnberg, Germany, and has authored over 300 scientific publications.

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