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High k and ALD/CVD Metal Precursors
Techcet, Aug 2010, Pages: 72
Interconnects will drive the ALD/CVD metal precursor market to $403M by 2016, according to the report “High ? and ALD/CVD Metal Precursors, A Semiconductor Materials Report 2010.” The recent recession notwithstanding, 2010 revenues are already expected to exceed 2007 levels by 3%. The metal precursor market comprises three main segments: interconnects, capacitors and gates.
The 2009 market size for CVD/ALD precursors for interconnect applications was approximately $100M, of which $83M is WF6 and TDMAT (Ti) used in established technologies. Organic growth, combined with the introduction of an ALD Cu barrier, will result in a 2016 interconnect metal precursor market of $303M.
The adoption of Ru as the Cu barrier could drive revenues even higher, though it is more likely that ALD Co will replace sputtered Ta/TaN at 22nm and beyond. Co precursor revenues are expected to approach $16M by 2016, whereas Ru would result in $54M in precursor revenues if it is the unlikely winner.
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