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Silicon Carbide and Related Materials 2010
Trans Tech Publications Inc, July 2011, Pages: 876
Series: Materials Science Forum, Volumes 679 - 680
Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th – September 2nd
This volume contains the proceedings of the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, on August 29th – September 2nd. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of ‘SiC and related materials and their applications’. This volume is divided into five chapters ranging from ‘SiC growth’ to ‘Biosystems’ and thus represents a comprehensive coverage of the field.
Review from Book News Inc.: Presentations at this sitting of the biennial conference reflect growing interest in high temperature operations and associated packaging technologies, applications especially with gallium nitride and zinc oxide, and renewable energy systems. Some 200 papers cover bulk and epitaxial growth; the characterization of fundamental and structural properties, point and extended defects, and surfaces and interfaces; doping and implanting, and processing surfaces and interfaces and nanostructures; devices: diodes, field effect transistors, bipolar transistors and thyristors, and circuits and packaging; and the related materials and biosystems graphene and carbon nanotubes, nitrides and other materials, and biocompatibility.
Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson
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