Welcome - Register - Login - Help/FAQ - 0 items

Search
Enter keywords, a title or
a report id number below.

Advanced


	Select a currency for use throughout the site

Viewing report

Order by Fax
Ask a Question
Printer Friendly
PDF Brochure

Hard Copy

Live Chat Live Help Software for Website

Electrical Simulation in the GaN Light-Emitting Diode Dies. Edition No. 1

VDM Publishing House, May 2010, Pages: 92


	Description



		Authors


		Enquire before Buying


		Send to a Friend

When the chip size of light emitting diodes (LEDs) and the input power become larger, current spreading in the active layer will obviously affect the optical, electrical, and thermal packaging performances of the LED chip. To further understand the current spreading behavior in the active layer, a three-dimensional numerical simulation is developed to analyze the electrical characteristic and current distribution of a GaN LEDs device. The results and trends found could serve as useful references for researchers focusing on the design of an LED chip.

For enquiries please call us on:

+353-1-415-1241 (GMT Office Hours)

1-917-300-0470 (EST Office Hours)