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Viewing report
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Air Gap Structures for Advanced Metallization Schemes. Edition No. 1
VDM Publishing House, Sep 2008, Pages: 160
The RC-delay and crosstalk noise of the interconnect
system are major problems in high-performance
semiconductor chips. The key is reducing the
coupling capacitance or the k-value of the insulator
between the metal lines by substituting silicon
dioxide by low-k materials or by integrating
cavities, called air gaps. Here, air gaps fabricated
by the selective Ozone-TEOS deposition are
considered to reduce the line-to-line capacitance.
Different integration schemes were fabricated; air
gaps requiring an additional lithography in Cu
damascene metallization, self-aligned air gaps in Cu
and in tungsten metallization, utilizing RIE
(reactive ion etch) processing, and air gaps
fabricated using non-conformal deposition processes
for the insulator in a 90nm Al RIE metallization
scheme. Structures were fabricated with and without
air gaps to compare the properties and to examine
different aspects such as k-value, simulations,
capacitance, electrical breakdown, leakage current,
electromigration, and self-heating by high current
application. The results show very promising
electrical properties of air gaps, exhibiting an
attractive alternative to low-k materials.
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