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Viewing report
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Antimonide-Based Composite-Channel HFETs. Edition No. 1
VDM Publishing House, Oct 2008, Pages: 100
The binary compound semiconductors, InSb and InAs,
along with their related alloys with similar lattice
constants are candidates for high-speed, low-power
electronic devices. Applications could include high-
speed analog and digital systems used for data
processing, communications, imaging, and sensing,
particularly in portable equipment such as hand-held
devices and satellites. The development of Sb-based
transistors for use in low-noise high-frequency
amplifiers, digital circuits, and mixed-signal
circuits could provide the enabling technology
needed to address these rapidly expanding needs.
However, a drawback of the technology is the low
breakdown voltage associated with the relatively
narrow band-gap InAs channel. Added with staggered
band lineup at InAs/AlSb heterojunction, the
generated holes from the breakdown cannot be
confined in the channel and result in significant
effects on device performance. In this work, we
propose an alternative approach of composite channel
to alleviate this issue. Device design, growth,
fabrication and characterization will be described
in details.
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