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Viewing report
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Advanced Packaging For Microelectronic and
Microsystem Applications. Edition No. 1
VDM Publishing House, Nov 2008, Pages: 116
The emergence of GaN-based devices promises a
revolution in areas requiring high performance
electronics, such as high speed earth and space-based
communication systems, advanced radar, integrated
sensors, high temperature electronics, and utility
power switching. The properties of this system make
it ideally suited for operation at elevated
temperatures and at voltage and current levels well
beyond that accessible by Si. Recent improvements in
material quality and device performance are rapidly
opening the door to commercialization, and III-N
technologies are demonstrating exciting developments
of late. Though devices are entering
commercialization, there are still considerable
unknowns, particularly in the reliability field.
Recent advances at the University of Florida will be
detailed in this work.
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