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Current Transport Modeling of Carbon Nanotubes. Edition No. 1 - Product Image

Current Transport Modeling of Carbon Nanotubes. Edition No. 1

  • Published: January 2009
  • Region: Global
  • 124 Pages
  • VDM Publishing House

The purpose of this book is to develop a complete
current transport
model for carbon nanotube field effect transistors
(CNT-FETs),
applicable in the analysis and design of integrated
circuits. The
model is derived by investigating the electronic
structure of carbon
nanotubes and by using the basic laws of
electrostatics in a field
effect transistor. By describing the carrier
concentration and charge
distribution in carbon nanotubes, analytical
expressions for the
carbon nanotube potential are derived and used to
obtain current
transport equations for a CNT-FET. Threshold and
saturation
voltages expressions are each derived in the process
and I-V
characteristics for CNT-FETs are calculated using
different
combinations of chiral vectors. The voltage transfer
characteristics of
basic logic circuits based on complementary CNT-FETs
are also
studied. A small-signal radio frequency (rf) model is
developed and
it is shown to have cut-off frequencies in the upper
GHz range.
Finally, due to the rapid growth of carbon nanotubes
as bio- and
chemical sensing devices, possible methods to
interpret and analyze
CNT-FETs when utilized as biosensors are also presented.

Jose Mauricio, Marulanda.
A successful scientist from San Salvador, El Salvador, who at the
age of only 20 was
already a college graduate. In 2001, he joined the graduate
program at Louisiana State
University and obtained his Masters and Doctoral degrees in
Electrical Engineering. His
research interests include carbon nanotubes, VLSI design, and
nanotechnology.

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