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Exploration of the Potential Defects in GaN HEMTs. Edition No. 1

VDM Publishing House, Jan 2009, Pages: 148


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What happens inside a GaN HEMT during device
operations? Usually,destructive measurements are
required to analyze the defect and the carrier
trapping - which are the two biggest reliabilty
issues in GaN electronics.The novel noninvasive
optical characterization techniques provided by this
book can visualize the potential defect and the
trapping region inside an operating GaN HEMT. The
techniques show promise for screening the device
failure.

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