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Viewing report
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Enhanced Light Extraction From GaN-based LEDs
With PS Nanospheres. Edition No. 1
VDM Publishing House, Jan 2009, Pages: 64
In this book, we have demonstrated the surface
roughness and nano-PSS LED fabricated by nanosphere
lithography. In surface roughness LED, We have
successfully proposed and fabricated GaN-based LEDs
with nanosphere layers. The surface texturing
process is easily and quickly achieved by using
nanosphere layers. This coating of the nanosphere
layers does not affect the electrical characteristic
of the LED. The periodic structure of nanosphere
layers enhances the light extraction efficiency of
the LED. The luminance intensities of the LEDs with
nanosphere layers of 300 nm and 500 nm diameters
were seen to increase by 5.72% and 9.05% at 20 mA,
respectively. In nano-PSS LED, the crystalline
quality of GaN epilayer was estimated by XRD. The
FWHM of nano-PSS LEDs and micro-PSS LEDs were
narrower than that conventional LED. This means that
we could improve crystal quality of GaN epilayer by
using nano-PSS LEDs and micro-PSS. The nano-PSS LED
also has better electrical property than
conventional LED. The light output power of the nano-
PSS LED was 18.8%~25.2%higher than the conventional
LED.
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