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Floating Body Cell: a Novel Capacitor-less DRAM Cell

Pan Stanford Publishing Pte. Ltd, Sep 2011, Pages: 400


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This book is the first monograph written comprehensively and exclusively for the technologies of the floating body cell (FBC), which is regarded as the most probable candidate to replace the conventional 1T-1C DRAM cell that faces the difficulty in scaling due to the capacitor whose capacitance must be kept constant throughout generations. Readers are provided with the information in this burgeoning field that is necessary in developing memories using FBC through the understanding of basic principles, procedures for device structure optimization, operational methods, relations between different applications, and their suitable technology options. One of the authors (Dr. Takashi Ohsawa) is known as the inventor of FBC and the presenter of the award-winning paper at the IEEE International Solid-State Circuits Conference (ISSCC) in 2002 for the cell concept and a memory design using the cell. This book covers the operational principles and features of FBC in comparison with the conventional 1T-1C DRAM cell, the mechanism how the signal of FBC is generated, the device parameter selection that contributes to enhance the signal, scaling, sense amplifier design and various applications in both embedded and standalone memories.

Key Features

- Written in the style based on the first principle of the semiconductor and the MOSFET physics to make the contents self-explanatory
- Abundant with practical examples of the elementary and integrated memory devices authors have actually simulated, designed, fabricated, and evaluated
- Provides materials researchers and device engineers with a clear idea of the boundary conditions necessary in developing memory products

Readership

Graduate and undergraduate students in semiconductor physics and electronic engineering; researchers and engineers in nanoelectronics, especially in novel memory R&D; device engineers and circuit designers in semiconductor memories.

About the Author

Takashi Ohsawa is chief specialist at the Center for Semiconductor Research and Development of Toshiba Corporation Semiconductor Company in Japan. Takeshi Hamamoto is an engineer at the Center for Semiconductor Research and Development of Toshiba Corporation Semiconductor Company in Japan.



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