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Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices - Product Image

Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices

  • ID: 1929646
  • Book
  • October 2011
  • 200 Pages
  • Trans Tech Publications Inc
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Series: Advanced Materials Research, Volume 276

Selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine

This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.
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Table of Contents (21 papers, 10 per page listed)

ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications
Eugene Chubenko, Alexey Klyshko, Vitaly Bondarenko, Marco Balucani, Anatoly I. Belous, Victor Malyshev p3

Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures
S.O. Gordienko, A.N. Nazarov, A.V. Rusavsky, A.V. Vasin, N. Rymarenko, V.G. Stepanov, T.M. Nazarova, V.S. Lysenko p21

Diamond – Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing
V.P. Popov, L.N. Safronov, O.V. Naumova, D.V. Nikolaev, Yury Nikolaevich Palyvanov, Igor Nikolaevish Kupriyanov p27

Hydrogen Gettering within Processed Oxygen-Implanted Silicon
Andrzej Misiuk, Adam Barcz, Jadwiga Bak-Misiuk, Alexander G. Ulyashin, Przemyslaw Romanowski p35

Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
V. Dobrovolsky, Fedir Sizov, S. Cristoloveanu p43

Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
A. Kohmyakov, V. Vyurkov p51

Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
V.P. Popov, M.A. Ilnitsky p59

High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
Mostafa Emam, M.A. Pavanello, F. Danneville, D. Vanhoenacker-Janvier, Jean Pierre Raskin p67

Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures
Bodgan Majkusiak, Andrzej Mazurak p77

Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs
Y.Y. Gomeniuk, Y.V. Gomeniuk, A.N. Nazarov, P.K. Hurley, Karim Cherkaoui, Scott Monaghan, P.E. Hellström, H.D.B. Gottlob, J. Schubert, J.M.J. Lopes

Effects of High–Energy Neutrons on Advanced SOI MOSFETs
Valeriya Kilchytska, Joaquin Alvarado, Otilia Militaru, Guy Berger, Denis Flandre p95

Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields
Anatoly Druzhinin, Inna Marymova, Igor Kogut, Yuriy Khoverko p109

On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams
Umesh Bhaskar, Vikram Passi, Azeem Zulfiqar, Ulf Södervall, Bengt Nilsson, Goran Petersson, Mats Hagberg, Thomas Pardoen, Jean Pierre Raskin p117

Non-Standard FinFET Devices for Small Volume Sample Sensors
Michal Zaborowski, Daniel Tomaszewski, Lidia Lukasiak, A. Jakubowski p127

3D SOI Elements for System-on-Chip Applications
I.T. Kogut, A.A. Druzhinin, V.I. Holota p137

Routes towards Novel Active Pressure Sensors in SOI Technology
Benoit Olbrechts, Bertrand Rue, Thomas Pardoen, Denis Flandre, Jean Pierre Raskin p145

Photovoltage Performance of Ge/Si Nanostructures Grown on Intermediate Ultrathin SiOX Layers
A.O. Podolian, V.V. Kuryliuk, A.B. Nadtochiy, S.V. Kondratenko, O.A. Korotchenkov, Yu.N. Kozyrev, V.K. Sklyar, M.Yu. Rubezhanska, V.S. Lysenko p159

Interface and Bulk Properties of High-K Gadolinium and Neodymium Oxides on Silicon
Y.Y. Gomeniuk, Y.V. Gomeniuk, A.N. Nazarov, V.S. Lysenko, H.J. Osten, A. Laha p167

Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures
V.S. Lysenko, Yu.V. Gomeniuk, Yu.N. Kozyrev, M.Yu. Rubezhanska, V.K. Skylar, S.V. Kondratenko, Ye.Ye. Melnichuk, Christian Teichert p179

A Model of the Evolution of the Au/Si Droplet Ensembles during Rapid Thermal Annealing at High Temperatures
Andrey V. Sarikov, A.I. Klimovskaya, O. Oberemok, O. Lytvyn, O. Stadnik p187

The Nanometer Scaled Defects Induces with the Dislocation Motion in II-VI Insulated Semiconductors
V.N. Babentsov, V.A. Boyko, A.F. Kolomys, G.A. Shepelski, V.V. Strelchuk, N.I. Tarbaev p195
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