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Viewing report
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Nanoelectronic Devices
Pan Stanford Publishing Pte. Ltd, Jan 2012, Pages: 350
This book provides the readers with the knowledge in fundamentals of nanoelectronic devices. Nanoelectronic devices have been developed as a successor of microelectronic devices, following the evolutionary path of scaling down. In this book, the authors attempt to build the principles of nanoelectronic devices based on those of microelectronic devices wherever possible and introduce the inherently nanoelectronic principles gradually.
The book starts with a brief review of quantum mechanics and solid-state physics that can form the basis of semiconductor device physics. The basics of electron transport and p–n junctions are covered, as they relate to the fundamental principles of MOSFET and other nanoelectronic devices. From there, the operations of MOS capacitors and MOSFETs are developed and some basic CMOS circuits are introduced.
Nanoelectronic devices are categorized into three types: quantum well, quantum wire, and quantum dot devices depending on the dimensionality of their active region. Three-dimensional device structures, new materials, and operating principles are emphasized. The basics of the wave nature of electrons, ballistic transport, and single electronics are explained as unique phenomena in those low-dimensional electron systems.
The last chapter is devoted to the nano-biotechnology application of field-effect transistors.
Authors:
- Byung-Gook Park (Seoul National University, South Korea)
- Sung Woo Hwang (Korea University, South Korea)
- Young June Park (Seoul National University, South Korea)
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