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HEMT (High Electron Mobility Transistor) - Patent and Technology Report - Key players, innovators and industry analysis
Dolcera, December 2011, Pages: 61
HEMT (High Electron Mobility Transistor) is a field effect device with hetero interface acting as a channel. The name High electron mobility has come from its high electron mobility nature which is a result of potential well near the hetero interface. HEMT’s mainly use III-V compound semiconductors as channel material. The main intention behind HEMT is to make use of the high mobility in logical applications instead of silicon. But later it was found that HEMT has very less noise figures which attracted communication sector and since it’s been used widely in the high frequency applications (radar, LTE, satellites etc).
The scaling of silicon is coming to its scaling limitations, researchers again looking back at HEMT as a possible replacement for silicon. The fabrication methods of HEMT have also been simplified since its invention. Now the industry predictions state that HEMT will take over convention silicon transistors by 2015. With the potential well as a channel HEMT could achieve frequencies above 1THZ at low power.
Dolcera report focuses on finding the key innovators and the industry ecosystem through relevant patents, clinical trials and university data encompassing the research in HEMT. The research also focuses on analyzing year wise patent activity, leading industry players and country wise patent activity. The research resulted in 6527 patents that are related to HEMT. The scope of our research covers more than 90 countries. The work also includes categorizing the obtained patents based on the relevant technology.
1. Introduction
2. High Electron Mobility Transistor: Operation and functioning
2.1 Device design
2.2 Working principle
2.3 Challenges in HEMT
3. Patent search strategy for HEMT
3.1 Control patents
3.2 Concept table
4. Patent classes for HEMT
5. Search query
6. Taxonomy of relevant patents for HEMT
7. Key findings
7.1 HEMT products in the market
7.2 Major players
7.2.1 Key companies in high electron mobility transistor market
7.2.2 Country wise distribution
7.3 HEMT trends over the years
8. HEMT timeline
9. Conclusion
10. References
Appendix A: Control patents
Appendix B: Relevant class code definition
B.1. IPC / ECLA/DEKLA class codes
B.2. US Class codes
B.3. Japanese F-terms
Appendix C: Concept table
Appendix D: Patent search strategy
List of Tables:
Table 1: Year-wise technological advancements in HEMT (HEMT timeline)
Table 2: Control patents to search patents for HEMT
Table 3: Concept table to search patents for HEMT
Table 4: Relevant patent classes and their definitions
Table 5: Search query for finding HEMT patents
Table 6: HEMT products in the market and their specification
Table 7: Technology based citation statistics
Table 8: Assignee based citation statistics
List of Figures:
Figure 1: Basic Device structure of HEMT
Figure 2: Depletion region formation near Schottky gate
Figure 3: Parasitic resistance
Figure 4: Parasitic capacitance
Figure 5: Top patent assignees for HEMT
Figure 6: IP activity for HEMT based on patent priority year
Figure 7: IP activity for HEMT based on patent publication year
Figure 8: Major countries in terms of IP activity for HEMT
Figure 9: Minor countries in terms of IP activity for HEMT
Figure 10: HEMT technology mapping with top market players
Figure 11: IP activity priority year wise for top assignees in HEMT
Figure 12: IP activity publication year wise for top assignees in HEMT
Figure 13: Year-wise patent or publication activity for top 10 technologies
Figure 14: Average citation frequency for top 10 assignees in HEMT
Figure 15: Average citation frequencies for top 10 technologies in HEMT
Figure 16: Technologies, assignee and their corresponding citation frequencies
- Sanken Denki
- Mitsubishi Denki
- Matsushita
- Motorola
- Furukawa
- NEC Corp
- CREE Inc
- Mitsubishi Electric
- Sharp KK
- Hitachi
- Sony
- Sumitomo
- Toshiba
- Fujitsu
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