Electromigration in Thin Films and Electronic Devices: Materials and Reliability

"Understanding and limiting electromigration in thin films" is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.

Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.

With its distinguished editor and international team of contributors, "Electromigration in thin films and electronic devices" is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field.

Key features:

- provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits
- comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration
- deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure

PART 1: INTRODUCTION

Modelling of electromigration phenomena
F Cacho and X Federspiel, STMicroelectronics, France
- Introduction
- Analytical methods
- Numerical methods
- Conclusion
- References

Modeling electromigration using the peridynamics approach
D T Read and V K Tewary, National Institute of Standards and Technology (NIST) and W H Gerstle, University of New Mexico, USA
- Introduction
- Previous approaches to modeling electromigration (EM)
- Peridynamics (PD)
- PD and EM
- Illustrative example
- Computational requirements: present and future
- Conclusions
- References

Modeling, simulation, and x-ray microbeam studies of electromigration
A M Maniatty, Rensselaer Polytechnic Institute, G S Cargill III, Lehigh University and H Zhang, Casacde Engineeering Services Inc., USA
- Introduction
- Modeling and simulation approaches
- Experimental, modeling and simulation findings
- Conclusions
- Acknowledgements
- References

PART 2: ELECTROMIGRATION IN COPPER INTERCONNECTS

X-ray microbeam analysis of electromigration in copper interconnects
H Zhang, Cascade Engineering Services Inc. and G S Cargill III, Lehigh University, USA
- Introduction
- Samples and X-ray microdiffraction methods
- Electromigration (EM)-induced strains in conductor lines
- Conclusions
- References

Voiding in copper interconnects during electromigration
C L Gan and M K Lim, Nanyang Technological University, Singapore
- Introduction
- Void nucleation
- Void growth
- Immortality
- Future trends
- Acknowledgements
- References

The evolution of microstructure in copper interconnects during electromigration
A S Budiman, SunPower Corporation, USA
- Introduction
- Copper microstructure evolution during electromigration
- Plasticity and materials degradation mechanisms in copper interconnects
- Implications for the reliability of advanced Cu interconnect schemes
- Conclusions and future trends
- References

Scaling effects on electromigration reliability of copper interconnects
L Zhang, IBM System and Technology Group, USA, J W Pyun, Samsung Electronics, Korea, X Lu, Intel Corporation and P S Ho, The University of Texas at Austin, USA
- Introduction
- Mass transport during electromigration (EM)
- Effect of via scaling on EM reliability
- Multi-linked statistical tests for via reliability
- Methods to improve the EM lifetime
- Conclusions and future trends
- Acknowledgements
- References

Electromigration failure in nanoscale copper interconnects
E T Ogawa, Broadcom Corporation, USA
- Process solutions being developed for copper interconnects
- Suppression by metal capping: electromigration (EM) scaling by generation
- Suppression by metal capping: blocking rate-limiting EM pathways
- Copper microstructure impact
- Conclusions
- Acknowledgements
- References

PART 3: ELECTROMIGRATION IN SOLDER AND WIREBONDS

Electromigration-induced microstructural evolution in lead-free and lead-tin solders
K-L Lin, National Cheng Kung University, Taiwan
- Introduction
- Intermetallic compound formation
- Void formation
- Formation of whisker and hillock
- Grain reorientation and grain rotation
- Dissolution and recrystallization
- References

Electromigration in flip-chip solder joints
D Yang and Y C Chan, City University of Hong Kong, Hong Kong and M Pecht, University of Maryland, USA
- Introduction
- Electromigration (EM)-induced voiding failure of solder interconnects
- Joule heating-enhanced dissolution of under bump metallurgy (UBM) and the diffusion of on-chip metal interconnects
- Stress-related degradation of solder interconnects under EM
- Thermomigration TM behaviour in solder interconnects under a thermal gradient
- Conclusions
- Acknowledgements
- References

Choong-Un Kim is Professor of Materials Science and Engineering at the University of Texas at Arlington, USA.

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