- Language: English
- 238 Pages
- Published: February 2012
- Region: China, Global
Strained Layer Epitaxy: Volume 379. Materials, Processing, and Device Applications. MRS Proceedings
- ID: 2129213
- November 1995
- 521 Pages
- Cambridge University Press
An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy is presented in this new volume from MRS. Research involving GeSi alloys and Si:C alloys are well represented. In the case of GeSi alloys, utilizing both strained and relaxed structures appears to be a strong component of the current research. Applications, devices and synthesis of improved relaxed and strained materials are featured. Special efforts to integrate the III-V and IV communities were also made during this symposium, and those efforts are reflected in the proceedings volume as well. Results on compositional graded layers in both the GeSi and III-V materials systems are presented. Topics include: general issues; ordering/low dimensional structures; characterization; device applications; growth of Si-based materials; and growth of compound semiconductors.
John C. Bean AT&T Bell Laboratories, New Jersey.
Keh-Yung Cheng University of Illinois, Urbana-Champaign.
Eugene A. Fitzgerald Massachusetts Institute of Technology.
Judy Hoyt Stanford University, California.