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Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications - 1999: Volume 572. MRS Proceedings

  • ID: 2129381
  • September 1999
  • 559 Pages
  • Cambridge University Press
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There is an ever-present need for electronic devices with improved power, frequency and temperature performance. To that end, the introduction of the SiC substrate and the demonstration of bright III-N light-emitting diodes have been catalysts for increased research and development of wide-bandgap semiconductor materials and devices during the nineties. This book from the Materials Research Society focuses on high-power, high-frequency and high-temperature applications of these wide-bandgap semiconductors. Topics include: SiC devices and processing; SiC epitaxy and characterization; SiC bulk growth and characterization; GaN growth and characterization; and GaN devices and processing.

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Steven C. Binari
Albert A. Burk
Michael R. Melloch Purdue University, Indiana.

Chanh Nguyen

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