0 CHECKOUT

Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications - 1999: Volume 572. MRS Proceedings

  • ID: 2129381
  • September 1999
  • 559 Pages
  • Cambridge University Press

There is an ever-present need for electronic devices with improved power, frequency and temperature performance. To that end, the introduction of the SiC substrate and the demonstration of bright III-N light-emitting diodes have been catalysts for increased research and development of wide-bandgap semiconductor materials and devices during the nineties. This book from the Materials Research Society focuses on high-power, high-frequency and high-temperature applications of these wide-bandgap semiconductors. Topics include: SiC devices and processing; SiC epitaxy and characterization; SiC bulk growth and characterization; GaN growth and characterization; and GaN devices and processing.

Note: Product cover images may vary from those shown

Steven C. Binari
Albert A. Burk
Michael R. Melloch Purdue University, Indiana.

Chanh Nguyen

Note: Product cover images may vary from those shown
Note: Product cover images may vary from those shown

PLEASE SELECT A FORMAT

  • Quick Help: The book will be shipped to you. The cover has a hard back.

HAVE A QUESTION?

If you have a more general question about our products please try our

FAQ SECTION

RELATED PRODUCTS

Our Clients

  • Ametek, Inc.
  • Intel Corporation
  • Micronas Group
  • Analog Devices, Inc.
  • Applied Materials, Inc.
  • Fairchild Semiconductor, Inc.