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Semiconductor Defect Engineering: Volume 864. Materials, Synthetic Structures and Devices. MRS Proceedings
Cambridge University Press, July 2005, Pages: 605
This book explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. In the case of epitaxial films, additional issues concerning stoichiometry and defects caused by plasmas and electron/ion irradiation are included. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.
S. Ashok Pennsylvania State University.
B. L. Sopori National Renewable Energy Laboratory, Golden, Colorado.
M. Tabe Shizuoka University, Japan.