Wide band gap nitride semiconductors and devices represent one of the fastest growing fields in R&D, meeting the demand created by the expansion of lighting applications and emerging high voltage switches for e.g. all electric vehicles or distributed power generation systems. This book, written by an expert in the field, introduces the reader to the fundamental issues, thus enabling him/her to follow the latest technological research.
Connecting material and device issues from a practical point of view, the author provides essential knowledge to advanced students, researchers and young professionals on fundamentals and operation of light emitters, RF FETs and switching devices for power electronics. A concise overview of nitride semiconductors from the material's properties through device characteristics, which complements the acknowledged threevolume handbook written by the same author.
From the contents:
General Properties of Nitrides
Doping: Determination of Impurity and Carrier Concentrations
The p–n Junction
Light–Emitting Diodes and Lighting
Semiconductor Lasers: Light Amplifi cation by Stimulated Emission of Radiation
Field Effect Transistors
1. General Properties of Nitrides
2. Doping: Determination of Impurity and Carrier Concentrations
3. Metal Contacts
4. Carrier Transport
5. The p– n Junction
6. Optical Processes
7. Light–Emitting Diodes and Lighting
8. Semiconductor Lasers: Light Amplification by Stimulated Emission of Radiation
9. Field Effect Transistors
Hadis Morkoç received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the then newly established School of Engineering at the Virginia Commonwealth University in Richmond, VA USA. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoç has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. He is one of most highly cited authors in the fields of engineering, physics, and material science.