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Thin Film Growth. Woodhead Publishing Series in Electronic and Optical Materials

  • ID: 2720073
  • July 2011
  • 432 Pages
  • Elsevier Science and Technology
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Thin film technology is used in many applications such as microelectronics, optics, hard and corrosion resistant coatings and micromechanics, and thin films form a uniquely versatile material base for the development of novel technologies within these industries. Thin film growth provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films.

Part one focuses on the theory of thin film growth, with chapters covering nucleation and growth processes in thin films, phase-field modelling of thin film growth and surface roughness evolution. Part two covers some of the techniques used for thin film growth, including oblique angle deposition, reactive magnetron sputtering and epitaxial growth of graphene films on single crystal metal surfaces. This section also includes chapters on the properties of thin films, covering topics such as substrate plasticity and buckling of thin films, polarity control, nanostructure growth dynamics and network behaviour in thin films.

With its distinguished editor and international team of contributors, Thin film growth is an essential reference for engineers in electronics, energy materials and mechanical engineering, as well as those with an academic research interest in the topic.

- Provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films
- Focusses on the theory and modelling of thin film growth, techniques and mechanisms used for thin film growth and properties of thin films
- An essential reference for engineers in electronics, energy materials and mechanical engineering

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Praface

Part I: Theory of thin film growth

Chapter 1: Measuring nucleation and growth processes in thin films

Abstract:

1.1 Introduction

1.2 Basic theory of epitaxial growth

1.3 Observation method of atomic steps

1.4 Two-dimensional-island nucleation and step-flow growth modes

1.5 The motion of atomic steps on a growing and evaporating Si(111) surface

1.6 Morphological instability of atomic steps

1.7 Conclusion and future trends

1.9 Appendix

Chapter 2: Quantum electronic stability of atomically uniform films

Abstract:

2.1 Introduction

2.2 Electronic growth

2.3 Angle-resolved photoemission spectroscopy

2.4 Atomically uniform films

2.5 Quantum thermal stability of thin films

2.6 General principles of film stability and nanostructure development

2.7 Beyond the particle-in-a-box

2.8 Future trends

2.9 Acknowledgments

Chapter 3: Phase-field modeling of thin film growth

Abstract:

3.1 Introduction

3.2 Modeling

3.3 Numerical results

3.4 Conclusion

Chapter 4: Analysing surface roughness evolution in thin films

Abstract:

4.1 Introduction

4.2 Roughness during homo-epitaxial growth

4.3 Roughness during hetero- or non-epitaxial growth

4.4 Future trends

Chapter 5: Modelling thin film deposition processes based on real-time observation

Abstract:

5.1 Introduction: time resolved surface science

5.2 Basics of growth and relevant length of and timescales for in-situ observation of film deposition

5.3 Experimental techniques for real-time and in-situ studies

5.4 Experimental case studies

5.5 Future trends

5.6 Sources of further information and advice

Part II: Techniques of thin film growth

Chapter 6: Silicon nanostructured films grown on templated surfaces by oblique angle deposition

Abstract:

6.1 Introduction

6.2 Preparation of templated surface for oblique angle deposition

6.3 Fan-out on templated surface with normal incident flux

6.4 Fan-out growth on templated surfaces with oblique angle incident flux

6.5 Control of fan-out growth with substrate rotations

6.6 Applications and future trends

Chapter 7: Phase transitions in colloidal crystal thin films

Abstract:

7.1 Introduction

7.2 Experimental tools

7.3 Description of colloidal crystal phases: historical survey

7.4 Phase transition sequence in colloidal crystal thin films

7.5 Conclusions and future trends

7.6 Acknowledgements

Chapter 8: Thin film growth for thermally unstable noble-metal nitrides by reactive magnetron sputtering

Abstract:

8.1 Introduction

8.2 Deposition of stoichiometric Cu3N

8.3 Nitrogen re-emission

8.4 Doping of Cu3N by co-sputtering

8.5 Conclusions

Chapter 9: Growth of graphene layers for thin films

Abstract:

9.1 Introduction

9.2 Large-scale pattern growth of graphene films for stretchable transparent electrodes

9.3 Roll-to-roll production of 30-inch graphene films for transparent electrodes

9.4 Conclusions

Chapter 10: Epitaxial growth of graphene thin films on single crystal metal surfaces

Abstract:

10.1 Introduction

10.2 Structure of graphene on metals

10.3 Growth of graphene on a metal

10.4 Future trends

10.5 Sources of further information and advice

10.6 Acknowledgements

Chapter 11: Electronic properties and adsorption behaviour of thin films with polar character

Abstract:

11.1 Introduction to oxide polarity

11.2 Polar oxide films

11.3 Measuring polarity of thin oxide films

11.4 Adsorption properties of polar films

11.5 Conclusion and future trends

11.7 Acknowledgements

11.6 Sources of further information and advice

Chapter 12: Polarity controlled epitaxy of III-nitrides and ZnO by molecular beam epitaxy

Abstract:

12.1 Introduction

12.2 Lattice polarity and detection methods

12.3 Polarity issues at heteroepitaxy and homoepitaxy

12.4 Polarity controlled epitaxy of GaN and AlN

12.5 Polarity controlled epitaxy of InN

12.6 Polarity controlled epitaxy of ZnO

12.7 Conclusions

Chapter 13: Understanding substrate plasticity and buckling of thin films

Abstract:

13.1 Introduction

13.2 Experimental observations

13.3 Modelling

13.4 Discussion

13.5 Conclusions

Chapter 14: Controlled buckling of thin films on compliant substrates for stretchable electronics

Abstract:

14.1 Introduction

14.2 Mechanics of one-dimensional non-coplanar mesh design

14.3 Mechanics of two-dimensional non-coplanar mesh design

14.4 Conclusions

Chapter 15: The electrocaloric effect (ECE) in ferroelectric polymer films

Abstract:

15.1 Introduction

15.2 Thermodynamic considerations on materials with large electrocaloric effect (ECE)

15.3 Previous investigations on electrocaloric effect (ECE) in polar materials

15.4 Large electrocaloric effect (ECE) in ferroelectric polymer films

15.5 Future trends

15.6 Conclusion

15.7 Acknowledgements

Chapter 16: Network behavior in thin films and nanostructure growth dynamics

Abstract:

16.1 Introduction

16.2 Origins of network behavior during thin film growth

16.3 Monte Carlo simulations

16.4 Results and discussion

16.5 Conclusions

Index

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Cao, Zexian
Zexian Cao is a Professor at the Institute of Physics of the Chinese Academy of Sciences in Beijing, China.

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