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Nanomemory - Global Strategic Business Report

  • ID: 1056041
  • Report
  • July 2009
  • Region: Global
  • 558 Pages
  • Global Industry Analysts, Inc
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  • Cavendish Kinetics (US)
  • Fujitsu Limited (Japan)
  • Hitachi, Ltd. (Japan)
  • Intel (US)
  • Nanochip, Inc. (US)
  • Nanosys, Inc. (US)
  • MORE
This report analyzes the Global Market for Nanomemory in Millions of US$. The types of Nanomemory technologies discussed in the report include: Ferroelectric Random Access Memory or FRAM, Magnetoresitive Random Access Memory or MRAM, Ovonic Unified Memory, Holographic Memory, Nano-RAM or NRAM, Molecular Memory, and Polymer memory. Annual forecasts are provided for the period of 2010 through 2015. The report profiles 40 companies including many key and niche players worldwide such as

Advanced Micro Devices, Inc., California Molecular Electronics Corporation, Cavendish Kinetics, Colossal Storage Corporation, Cypress Semiconductor Corporation, Everspin Technologies, Inc., Fujitsu Limited, Hewlett-Packard Development Company, L.P, Hitachi, Ltd., Honeywell International Inc., International Business Machines Corp., Infineon Technologies AG, Intel, Nanochip, Inc., Nanosys, Inc., Nantero, Inc., NVE Corporation, Ovonyx, Inc., Ramtron International Corporation, Samsung Electronics Co., Ltd., SanDisk Corporation, STMicroelectronics NV, Texas Instruments Inc., and ZettaCore, Inc.

Market data and analytics are derived from primary and secondary research. Company profiles are mostly extracted from URL research and reported select online sources.

Please note: Reports are sold as single-site single-user licenses. The delivery time for hard copies is between 3-5 business days, as each hard copy is custom printed for the organization ordering it. Electronic versions require 24-48 hours as each copy is customized to the client with digital controls and custom watermarks.

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Note: Product cover images may vary from those shown
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  • Cavendish Kinetics (US)
  • Fujitsu Limited (Japan)
  • Hitachi, Ltd. (Japan)
  • Intel (US)
  • Nanochip, Inc. (US)
  • Nanosys, Inc. (US)
  • MORE

Study Reliability and Reporting Limitations I-1
Disclaimers I-2
Data Interpretation & Reporting Level I-3
Product Definitions and Scope of Study I-3

II. Executive Summary

Modern Day Storage Woes II-1
Nanomemory to the Rescue II-1
Table 1: World Long Term Projections for Nanomemory Market-
Annual Sales Figures in US$ Billion for the Years 2010
through 2015 (includes corresponding Graph/Chart) II-2
Who Leads the Pack? II-2
Conventional Vs Emerging Storage Options II-3
Comparison Between Traditional and Emerging Memory Types II-3
Nanotechnology to Alter Memory Storage in Electronics II-3
MRAM: Pros and Cons II-4
What’s in Store for MRAM? II-4
Ovonic Memory Gathering Momentum II-4
Holographic Memory in Future II-5
R&D in Nanomemory: A Sneak Peak II-5
Carbon Nanotubes Based Memory II-5
Nanodots II-5
Nanocrystalline Memory II-6
Nano-Ionic Memory II-6
Patent Protection Vital for Investment II-6
Table 2: Number of Patents Filed for Select Nanomemory Types
from 2003 Onwards in the US, Japan, Europe, and WIPO
(includes corresponding Graph/Chart) II-7

Nanotechnology: Breaking Conventional Size Barriers II-8
Volatile and Non-Volatile Memory II-8
Nanomemory: An Introduction II-9
Select Nanomemory Types - Features, and Applications II-9
Comparison of Select Nanomemory Technologies- FRAM, MRAM,
and Ovonic Unified Memory II-10
Ovonic Unified Memory II-11
Holographic Memory II-12
Molecular Memory II-13
Polymer Memory II-13

Researchers Develop New Nanotube Flash Memory Design II-15
Researchers to Develop Graphene Memory II-15
Physicists Succeed in Controlling Electron Spin II-16
Chemists Develop New Method to Synthesize Nanorods and Nanowires II-16
Researchers Develop Nanowires to Store Data II-17
IBM Develops New Memory Device II-17
KAIST Develops 8nm NVM Flash Memory II-17
University of Southampton Develops Optical Memory Element II-18
Researchers Develop the Largest Memory Bit Array II-18
Physicists Develop Optical Memory Using Single Gallium
Nanoparticle II-18

Toshiba Unveils New 16-Gigabit Memory Chip II-19
Micron Launches 8-Gb SLC high speed NAND II-19
AMD Launches New Stream Processor, AMD FireStream™ 9250 II-19
AMD Introduces Two New Graphics Card with TeraFlops Graphics
Chip II-20
AMD to Use GDDR5 Memory in New Advanced ATI Radeon™ Graphics
Systems II-20
AMD Introduces New Graphics Accelerator, ATI FirePro™ V 8700 II-21
AMD Releases New Graphic Processor, ATI Radeon™ E2400 II-21
Hitachi Announces Nanotechnology Milestone for Hard Disk
Drives Capacity II-22
Ramtron’s New Integrated EDR Incorporates F-RAM Capabilities II-22
Ramtron Unveils New Serial F-RAM with 2Mb Memory II-23
Ramtron Unveils FM3135 II-24
Samsung’s Sampling of Smallest-ever 2Gb DDR3 Utilizes 50nm
Class Circuiting II-24
Samsung’s New High-Performing Smart Card IC Utilizes 90nm
Technology II-25
SanDisk Releases a New WORM Digital Memory Card for Data-
Write-Protection II-26
SanDisk’s New Advanced Memory Stick PRO-HG Duo™, Ideal for
SLR cameras II-27
Everspin Includes Small Footprint and byte-wide BGA Products
into MRAM family II-27
Infineon Technologies Launches X-GOLD™102 II-28
Nanochip Unveils a Breakthrough Storage Technology II-28
Ramtron Unveils FM25V05, Serial 512-Kilobit F-RAM II-29
Ramtron Releases High-Speed FM28V100 II-29
Ramtron Releases FM25V10, Flexible 1-Megabit Serial F-RAM II-30
Ramtron Enhances Its Range of AEC-Q100-Specified F-RAM Memory
Devices II-31
Samsung Introduces First 30nm Flash Memory in the World II-31
Virage Unveils New 65nm Product Lines II-31
RIC Launches 4Mb FRAM II-32
Samsung Launches 8GB Flash Memory II-33
Hewlett-Packard Launches Nanotechnology Based New Computer Chip II-33
Ramtron Unveils 4Mb Non-Volatile FRAM Memory II-33
Samsung Develops a New Chip for Digital TVs II-34
Samsung Launches 8GB moviNAND for Mobiles II-34
Samsung Launches 30nm Process Node Based Primary Flash Memory
Chip II-34
Virage Expands the Range of Silicon Aware IP Line II-35
Toshiba Corp to Manufacture NAND Flash Memory Chips with 43nm
Technology II-35
Impinj Releases AEON@OTP Nonvolatile Memory Cores II-35
Scientists in South Korea Create the World’s First 8-
nanometer Flash Memory Part II-36
Epson and Fujitsu Develop Next-Generation FRAM Technology II-36
Fujitsu Introduces Embedded FRAM for Digital Televisions II-36
Ramtron Extends Grade 1 Automotive Devices Product Range II-37
Ramtron Announces Expansion of +125ºC F-RAM-based Automotive
Devices II-38
Ramtron Unveils a New 2Mb Parallel High-Density F-RAM memory
device II-38
Ramtron Expands Versa 8051Series by Unveiling a 2 KB F-RAM
Microcontroller II-39
Ramtron Expands Nonvolatile State Saver Line by Unveiling a
4-bit F-RAM Device II-39
Ramtron Expands F-RAM-based Grade 1 Automotive parts II-40
FRAM Memory from Ramtron Incorporated in Car Audio Platform
by Daesung-Eltec II-41
Ramtron Announces Upgrading of Grade 1 Automotive line II-41
Ramtron Introduces Improved F-RAM-Enhanced™ Processor Companions II-42
Samsung Unveils GDDR5 Memory Chip Transfers data at Speeds of
6Gb/s II-42
Samsung Introduces 64Gb MLC NAND Flash Memory for High
Density Storage II-43
Samsung Unveils 60nm 2Gb DDR2 DRAM Using Class Processing
Technology II-43
Samsung Introduces a Multi-chip High-Density moviMCP Memory
Package II-44
Samsung Commences Sampling of 16Gb NAND Flash Utilizing 50nm
Processing Technology II-45
Hitachi and Renesas Launch Circuit Technology for On-Chip
Nonvolatile Memory Applications II-45
Hitachi Launches 0.05mm x 0.05mm Contactless RFID IC Chip II-46
Infineon Unveils XE166 Family of Real-Time Signal Controllers II-46
Impinj Releases AEON® for Production in TSMC II-47
Ramtron and TI to Launch 4-Mbit FRAM II-47

Hynix to Acquire Stake in ProMOS II-48
Lockheed Martin Acquires Government Business Unit of Nantero II-48
BAE Systems and MAST to Develop Nano-Sensor Technology II-49
Qimonda Partners with Elpida II-49
SVTC Partners with Nantero II-49
Hynix Partners with Nanosys II-49
Qimonda AG in Partnership with Elpida Memory Inc. to Develop
Nano-Chips II-50
Nantero Partners with SVTC Technologies to Develop Carbon
Nanotube Process II-50
Aewin Technologies Enters into an Agreement with Ramtron II-50
Numonyx Commences Prototype Production of 45nm Wafers II-50
Hynix to Commence Production of 50nm DRAM II-51
SanDisk to Commence Production of MLC NAND Flash Memory II-51
Crocus Technology Raises Funds to Develop MRAM Technology II-51
Samsung and Sun Microsystems Collaborate on SLC Flash Memory
Development II-51
ATMI and Ovonyx to Collaborate on High-Volume Manufacture of
PCM Products II-52
SanDisk and Toshiba Co-Develop NAND Flash Memory II-52
Energy Optimizers Enters into an Agreement with Ramtron II-53
Freescale Forms New Company for MRAM Development II-54
Hynix Joins the Memory Technology Access Program (M-TAP) of
Nanosys II-54
Toshiba Develops 16-Gigabit NAND Flash Memory II-55
Ramtron International Selects Shanghai Welltech for FM25L16
Designing II-55
AMD Partners with TSMC II-56
TSMC Announces Virage as IP Partner II-56
RIC Partners with TI II-56
Samsung and Toshiba Collaborate on Premium NAND Memory Chips II-57
Ovonyx and Hynix Collaborate on PCM Products Development II-57
Ovonyx and Qimonda Collaborate on PCRAM Technology II-58
IBM, Infineon, Freescale, Samsung & Chartered Cooperate on
32-nm Semiconductors II-58
Spansion Inks Agreement with TSMC II-59
AMD Enters into an Agreement with SAMSUNG II-59
Infineon Enters into an Agreement with IBM II-59
Toshiba to Manufacture 43nm NAND Flash Memory Chips II-59
Samsung Starts Production of 16-gigabit NAND Flash Memory II-60
Samsung Commences Production of 60nm DRAM Chips II-60
Intel Corp Receives Approval for New Computer Chip Plant II-60
NVE Corp to Receive New Patent II-60
Intel to Commence Mass Production of Alverstone II-60
National Semiconductor to Qualify Cavendish Kinetics’
Nanomech Process II-61
Samsung Commences Mass Production of NAND Flash Memory Chips II-61

Advanced Micro Devices, Inc. (US) II-62
California Molecular Electronics Corporation (US) II-62
Cavendish Kinetics (US) II-62
Colossal Storage Corporation (US) II-63
Cypress Semiconductor Corporation (US) II-63
Everspin Technologies, Inc. (US) II-63
Fujitsu Limited (Japan) II-63
Hewlett-Packard Development Company, L.P. (US) II-64
Hitachi, Ltd. (Japan) II-64
Honeywell International Inc. (US) II-64
International Business Machines Corp. (US) II-65
Infineon Technologies AG (Germany) II-65
Intel (US) II-65
Nanochip, Inc. (US) II-66
Nanosys, Inc. (US) II-66
Nantero, Inc. (US) II-66
NVE Corporation (US) II-67
Ovonyx, Inc. (US) II-67
Ramtron International Corporation (US) II-67
Samsung Electronics Co., Ltd. (Korea) II-67
SanDisk Corporation (US) II-68
STMicroelectronics NV (Switzerland) II-68
Texas Instruments Inc (US) II-69
ZettaCore, Inc. (US) II-69


Total Companies Profiled: 40

Region/Country Players
The United States 26
Japan 5
Europe 6
Germany 2
The United Kingdom 2
Rest of Europe 2
Asia-Pacific (Excluding Japan) 3
Note: Product cover images may vary from those shown
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  • Advanced Micro Devices, Inc. (US)
  • California Molecular Electronics Corporation (US)
  • Cavendish Kinetics (US)
  • Colossal Storage Corporation (US)
  • Cypress Semiconductor Corporation (US)
  • Everspin Technologies, Inc. (US)
  • Fujitsu Limited (Japan)
  • Hewlett-Packard Development Company, L.P. (US)
  • Hitachi, Ltd. (Japan)
  • Honeywell International Inc. (US)
  • International Business Machines Corp. (US)
  • Infineon Technologies AG (Germany)
  • Intel (US)
  • Nanochip, Inc. (US)
  • Nanosys, Inc. (US)
  • Nantero, Inc. (US)
  • NVE Corporation (US)
  • Ovonyx, Inc. (US)
  • Ramtron International Corporation (US)
  • Samsung Electronics Co., Ltd. (Korea)
  • SanDisk Corporation (US)
  • STMicroelectronics NV (Switzerland)
  • Texas Instruments Inc (US)
  • ZettaCore, Inc. (US)
Note: Product cover images may vary from those shown
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Note: Product cover images may vary from those shown