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Toshiba - TL1F1-LW1 Technology Analysis

  • ID: 2727258
  • Report
  • December 2013
  • Region: Global
  • System Plus Consulting
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The First GaN On Silicon Led By Toshiba On The Market
New In This Led: Silicon Substrate, Bonding Without Gold, Mesa Structure, Thinned Epitaxial Structure

Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features.

The TL1F1 LED are produced on a cheap 8" silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding
process without gold.

Moreover, a significant work has been done to thin the epitaxial layer in GaN. The thickness of the GaN layer is close to thicknesses measured on Sapphire LED.

A low current density per sq cm is obtained, estimated at 20A/cm², lower than sapphire LED. But the second generation GaN on Si LED produces 30% more lumen.

The Technology Analysis report contains only Physical Analysis & Manufacturing Process Flow. A full reverse costing report is also available.
Note: Product cover images may vary from those shown
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Physical Analysis
- Physical Analysis Methodology- Package Views & Dimension- Package Opening
- Package X-Ray
- Package Cross-Section
- Phosphor
- Protective diode
- LED Views & Dimensions
- Cathode
- Anode
- Epitaxy
- LED Thickness
- LED Characteristics

Manufacturing Process Flow
- Global Overview
- LED Fabrication Unit
- LED Process Flow
- Package Fabrication Unit
- Package Process Flow
Note: Product cover images may vary from those shown
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Note: Product cover images may vary from those shown