Toshiba - TL1F1-LW1 Technology Analysis
- ID: 2727258
- December 2013
- Region: Global
- System Plus Consulting
The First GaN On Silicon Led By Toshiba On The Market
New In This Led: Silicon Substrate, Bonding Without Gold, Mesa Structure, Thinned Epitaxial Structure
Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features.
The TL1F1 LED are produced on a cheap 8" silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding
process without gold.
Moreover, a significant work has been done to thin the epitaxial layer in GaN. The thickness of the GaN layer is close to thicknesses measured on Sapphire LED.
A low current density per sq cm is obtained, estimated at 20A/cm², lower than sapphire LED. But the second generation GaN on Si LED produces 30% more lumen.
The Technology Analysis report contains only Physical Analysis & Manufacturing Process Flow. A full reverse costing report is also available.
- Physical Analysis Methodology- Package Views & Dimension- Package Opening
- Package X-Ray
- Package Cross-Section
- Protective diode
- LED Views & Dimensions
- LED Thickness
- LED Characteristics
Manufacturing Process Flow
- Global Overview
- LED Fabrication Unit
- LED Process Flow
- Package Fabrication Unit
- Package Process Flow