- Language: English
- 61 Pages
- Published: July 2012
- Region: China
Global IGBT based Power Module Market 2012-2016
- Published: January 2013
- Region: Global
- 42 Pages
TechNavio's analysts forecast the Global IGBT-based Power Module market to grow at a CAGR of 14.07 percent over the period 2012-2016. One of the key factors contributing to this market growth is the increasing demand from renewable energy production. The Global IGBT-based Power Module market has also been witnessing the use of copper wires for interconnections. However, the high cost of IGBT power modules could pose a challenge to the growth of this market.
TechNavio's report, the Global IGBT-based Power Module Market 2012-2016, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the Americas, and the EMEA and APAC regions; it also covers the Global IGBT-based Power Module market landscape and its growth prospects in the coming years. The report also includes a discussion of the key vendors operating in this market.
The key vendors dominating this market space are Mitsubishi Electric Corp., Infineon Technologies AG, Fuji Electric Holdings Co., Ltd., and Semikron International GmbH
The other vendors mentioned in the report are ABB Ltd., Toshiba Corp., NXP Semiconductors N.V., Fairchild Semiconductor International, Inc., STMicroelectronics N.V. and Renesas Electronics Corp.
Key questions answered in this report:
What will the market size be in 2016 and what will the growth rate be?
What are the key market trends?
What is driving this market?
What are the challenges to market growth?
Who are the key vendors in this market space?
What are the market opportunities and threats faced by the key vendors?
What are the strengths and weaknesses of the key vendors?
You can request one free hour of analyst time when you purchase this report. Details provided within the report.
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01. Executive Summary
03. Market Coverage
04. Market Landscape
04.1 Market Size and Forecast
04.2 Applications of IGBT-based Power Module
04.3 Applications of IGBT-based Power Module by Growth Rate
04.4 Market Size by Applications
Industrial Motor Drives
04.5 Five Forces Analysis
05. Geographical Segmentation
06. Vendor Landscape
07. Market Growth Drivers
08. Drivers and their Impact
09. Market Challenges
10. Impact of Drivers and Challenges
11. Market Trends
12. Key Vendor Analysis
12.1 Mitsubishi Electric Corp.
12.2 Infineon Technologies AG
12.3 Fuji Electric Co. Ltd.
12.4 Semikron International GmbH
13. Other Reports in this Series
List of Exhibits:
Exhibit 1: Global IGBT-based Power Module Market 2012-2016 (US$ million)
Exhibit 2: Global IGBT-based Power Module Market by Application 2012
Exhibit 3: Applications of IGBT-based Power Modules by Growth Rate 2012-2016
Exhibit 4: Global IGBT-based Power Module Market by Applications in Industrial Motor Drives 2012-2016 (US$ million)
Exhibit 5: Global IGBT-based Power Module Market by Applications in Renewable Energy 2012-2016 (US$ million)
Exhibit 6: Global IGBT-based Power Module Market by Applications in Railway Traction 2012-2016 (US$ million)
Exhibit 7: Global IGBT-based Power Module Market by Applications in Consumer Appliances 2012-2016 (US$ million)
Exhibit 8: Global IGBT-based Power Module Market by Applications in Power Supplies 2012-2016 (US$ million)
Exhibit 9: Global IGBT-based Power Module Market by Geographical Segmentation 2012
Exhibit 10: Global IGBT-based Power Module Market by Vendor Segmentation 2012
TechNavio Announces the Publication of its Research Report - Global IGBT-based Power Module Market 2012-2016
TechNavio today launched its report, Global IGBT-based Power Module Market 2012-2016, based on an in-depth analysis covering the Americas, and the EMEA and APAC regions. The report aims to aid decision makers' understanding of the present and future landscape of the market.
Commenting on the report, an analyst from TechNavio's Engineering team said: “There is an increasing focus on insulated gate bipolar transistor (IGBT) chip optimization because of the increasing need for higher power density, higher power output, and increased thermal resistivity. IGBTs are used extensively in power electronic devices across various applications. Several end-users prefer IGBT chips with compact design, small size, and high reliability in order to improve the functionality of power electronic devices. Several market vendors are investing heavily in R&D processes to manufacture optimized chips to increase the operational efficiency of IGBT-based modules. The increasing focus on IGBT chip optimization will have a positive impact on the growth of the Global IGBT-based Power Module market during the forecast period.”
According to the report, one of the major drivers is the increasing need for the production of energy from renewable energy sources. It is estimated that the global energy consumption will increase massively by 2030. The increase in energy consumption coupled with the decrease in fossil energy resources mandates the use of renewable energy resources for the production of electrical energy. IGBT-based power modules are extensively used in wind power plants and solar panels.
Further, the report reveals that one of the major challenges is the high cost of IGBT-based power modules.
The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to a SWOT analysis of the key vendors.
- Fairchild Semiconductor International
- Fuji Electric Holdings
- Infineon Technologies
- Mitsubishi Electric
- NXP Semiconductors
- Renesas Electronics
- Semikron International