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Infineon CoolMOS C7 Technology Analysis - Product Image

Infineon CoolMOS C7 Technology Analysis

  • Published: April 2014
  • Region: Global
  • System Plus Consulting

7th generation Superjunction MOSFET

The CoolMOS C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650V for a current of 7A (100°C), the C7 is optimized for hard switching topologies such as Power Factor Correction, solar boost circuit applications.

The CoolMOSTM C7 offers a very low on-resistance (between 19m? and 225m?), and a fast switching speed, more than 100KHz. The C7 differs from the C6 via a new multi-epitaxy technology and an original contact solution.

The Technology Analysis report contains only Physical Analysis & Manufacturing Process Flow. A full reverse costing analysis is also available, for more information please click on the link below.

1. Overview / Introduction

2. Companies Profile

Infineon Profile

3. IPD65R225C7 Characteristics

IPD65R225C7 Characteristics

4. IPD65R225C7 Physical Analysis

Physical Analysis Methodology
Package Views & Dimensions
Package Cross-Section
Leadframe

MOSFET

Die View, Dimensions & Marking
Gate Supply Line
Guard Ring
Delayering
Metal Layers
Source and Gate
Source Cross-Section
Substrate and Epitaxy Layers
Superjunction Structure
Backside
MOSFET Characteristics

5. Manufacturing Process Flow

Global Overview
MOSFET Front end Unit
MOSFET Tests Unit
Transistor Process Flow

Note: Product cover images may vary from those shown

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