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RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2010-2020 - Product Image

RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2010-2020

  • Published: June 2014
  • Region: Global
  • Yole Développement
Will GaN-on-Si Introduction Help to Capture More Market Share than Si-LDMOS?

IS IT POSSIBLE FOR GAN TO REACH MORE MAINSTREAM APPLICATIONS UNDER 3.5GHZ?

Today, the need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications.

More power, more frequency bands, better linearity and improved efficiency are still driving RF semiconductor devices' current development, since the market needs devices able to handle all of these specifications at a reasonable price.

Recent mergers and acquisitions are a concern for the overall RF market and Si-LDMOS, GaAs and GaN-based devices. The overall RF market doesn't seem big enough for so many players; as a result, companies are trying to gain scale in order to increase profitability, which has stagnated. We expect that commercial wireless telecom, CATV and defense applications will be the main applications affected.

Although significant improvements have been achieved in RF GaN-based devices (performance and yields), there's still a barrier preventing GaN-on-SiC from entering mainstream applications (i.e. in wireless telecom base stations or CATV). In sub-3.5 GHz range applications, GaN-on-SiC is not cost-effective enough READ MORE >

1. Acronyms

2. Companies cited in this report

3. Report objectives

4. Executive summary

5. Latest news

6. GaN RF device market analysis
- Technology comparison of RF PAs
- Technology drivers for GaN electronics
- Why so many mergers and acquisitions?
- Applications for GaN devices in RF electronic systems
- Technology drivers and figure of merit for GaN
- Market landscape
- GaN device applications roadmap
- Market evolution: two scenarios under consideration
- GaN RF device market breakdown
- Analysis of the two scenarios
- 2010-2020 GaN RF device market size
- Conclusions and perspectives

7. RF GaN HEMT overview
- GaN and Silicon FET structure comparison
- State-of-the-art comparison of GaN-on-Si high-power RF transistors in 2014
- GaN/SiC/Si/GaAs high-power RF transistors comparison
- Microwave frequency bands: comparison of Si, SiGe, GaAs, InP and GaN frequency and Vb ranges
- Examples of available offers in 2014 power RF GaN devices
- Examples of Triquint's (merged with RFMD) offer in GaN HEMT (S.I. SiC)
- Examples of GaN HEMT portfolio in 2014
- Company profiles: Cree (US), Sumitomo Electric Device Innovations (JP), MACOM (US), Nitronex (US - Acquired by MACOM), RF Micro Devices, Inc. (RFMD® (US - Merged with TriQuint), Skyworks (US), UMS (FR/GE)
- Tentative cost breakdown of HEMT process GaN/SiC (4”, 6” and 8”) from substrate to devices

8. GaN substrates overview
- GaN-on-XX: technology comparison - is there a place for GaN-on-Si and GaN-on-Diamond-based RF Power devices?
- GaN-on-XX Epiwafer - expected specs
- GaN Epiwafer - usage, technical feasibility and manufacturing cost
- Different substrates for GaN epitaxy, i.e. “direct epi-growth”
- GaN-on Si: comparison of epitaxy techniques
- Semi-insulating (SI) GaN substrates
- Known semi-insulating substrates players
- 4” epi-wafer needs for the GaN-based RF devices market: 2010–2020 (“Nominal” scenario)
- Tentative forecast for RF GaN epiwafer market size: 2010–2020 (“Nominal” scenario)
- 4” epi-wafer needs for the GaN-based RF devices market: 2010–2020 (“Optimistic” scenario)
- Tentative forecast for 4” epi-wafer volume for RF GaN-on-Si FET: 2010-2020
- Conclusions

9. GaN RF devices industrial landscape
- Tentative global players in GaN RF business (R&D or production)
- Mapping: US foundries for Power RF GaN-based devices
- Mapping: European foundries for Power RF GaN-based devices Mapping: Asian foundries for Power RF GaN-based devices
- GaN RF business: company market share estimation
- RF GaN: tentative American industrial supply chain
- RF GaN: Tentative European industrial supply chain
- RF GaN: Tentative Japanese industrial supply chain
- RF GaN: Tentative Asian industrial supply chain (Japan excluded)

10. GaN HEMT markets
- WiMAX/LTE
- Wireless phone infrastructure: base stations (BTS) market
- CATV market
- V-SAT terminals market
- Satellite market
- Defense market

11. Recent known funding in RF GaN development

12. General conclusions

Appendix

- Aethercomm
- Alcatel-Lucent
- Ammono
- Arraycom
- AT&T
- Azzurro
- BAE Systems
- Celerica
- Covalent Materials
- Cree
- CRHEA
- Dynax
- EADS
- Epigan
- Ericsson
- Eudyna/Fujitsu
- FBH
- Filtronic
- Flarion Technologies
- Freescale
- Freiburg/Univ. Ulm/Fraunhofer IAF
- Fujitsu
- Furukawa
- Global Communication Semiconductors
- HitachiCable
- Hittite/Keragis
- HRL Lab.
- IAF
- IEMN
- II-VI Inc.
- IMEC
- Integra
- IQE
- ITRI
- KDDI
- Kopin
- KT
- Kyma
- L3Com
- LG Plus
- Lockheed Martin
- Lucent
- Lumilog/Saint-Gobain
- Macom/Nitronex
- MBDA
- MicroGaN
- Microsemi
- Mitsubishi
- Motorola
- MTI Corporation
- Nanowin
- NGK Insulators
- Nokia–Siemens
- Norstel
- Northrop Grumman
- Novagan
- NTT
- NTT DOCOMO
- NXP
- OKI
- OMMIC
- On Semiconductor
- PAM-Xiamen
- Peregrine
- Powdec
- QinetiQ
- Raytheon
- Renesas Elec.
- RFHIC
- RFMD/Triquint
- SAAB Microwave
- Samsung
- Samsung Electronic Mechanics
- SEDI
- Selex
- SiCrystal
- SK Telecom
- Skyworks
- SOITEC/Picogiga
- Soraa
- Sprint
- Sumitomo Electric Devices Innovation
- Suzhou Jiangzhan Semiconductor
- TDI
- Telstra
- Thales
- Thales 3-5 lab.
- T-Mobile
- Toshiba
- ToyodaGosei
- UMS
- US Air Force Laboratory
- Verizon
- WIN Semiconductors.

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