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A Magnetic Moment: Prospects for MRAM Technology, Markets and Applications Product Image

A Magnetic Moment: Prospects for MRAM Technology, Markets and Applications

  • Published: January 2013
  • Region: Global
  • 155 Pages
  • Forward Insights

FEATURED COMPANIES

  • Aeroflex, Inc.
  • Freescale Semiconductor
  • Infineon Technologies AG
  • Micron Technology
  • Qualcomm, Inc.
  • SK Hynix Semiconductor
  • MORE

Current charge-based semiconductor storage technologies such as SRAM, DRAM, NOR flash and NAND flash face scaling challenges as geometries shrink below 20nm. As a result, a marked increase in research activity focused on alternative memory technologies has occurred over the last decade.
Non-charge storage-based memories such as FeRAM and MRAM offer fast RAM-like performance along with non-volatility and extremely high endurance. Although in commercial production, both suffer from high costs vis-à-vis current technologies and have only been able to address niche applications.

All that is likely to change with the availability of samples of in-plane spin-torque transfer MRAM (STT-MRAM) from Avalanche Technology and Everspin Technologies. These achievements are a stepping stone to next generation perpendicular STT-MRAM which promises a scalable path with the potential to broaden its appeal into mainstream consumer applications. As a consequence, the embedded and standalone non-volatile RAM markets are on the cusp of explosive growth in the next few years.

A Magnetic Moment: Prospects for MRAM Technology, Markets and Applications offers an independent view of the opportunities and challenges presented by MRAM technology and its potential as one of the leading contenders in the emerging memory space.

List of Figures

List of Tables

Executive Summary

Memory Overview
- Introduction
- The Memory Hierarchy
- SRAM
-- Concept
-- Technology Evolution
- DRAM
-- Concept
-- Technology Evolution
- NOR Flash
-- Concept
-- Technology Evolution
- NAND Flash
-- Concept
-- Technology Evolution
- Ferroelectric Memories
-- Ferroelectric Random Access Memory (FeRAM)
-- Ferroelectric Transistors (FeFET)
- Phase Change Memory
-- Concept
-- Basic Operation
- Other Resistive Switching Memories

MRAM
- Introduction
- Conventional Design
- Toggle MRAM
-- Concept
-- Materials for the Toggle-MRAM:
- Thermal Assisted Switching TAS-MRAM
-- Concept
-- Materials for the TAS-MRAM
- Spin-Transfer Torque (STT) MRAM
-- Concept
-- Materials for the STT
--- Thermal Stability and Retention
--- Write Margin vs. Reliability
--- Scalability
-- Materials with Perpendicular Magnetic Anisotropy (PMA)
- Domain wall (DW) motion MRAM
-- Concept
-- Materials for the DW-Motion MRAM Cell
- Increasing the Bit Density With Multi Level Cells (MLC)
-- MLC Based on Single MTJs
-- MLC Based on Parallel Connected MTJs
-- MLC Based on Series Connected MTJs
-- MLC Based on Domain Wall Motion
-- MLC Programming
--- Two-Step Programming
--- Probabilistic Programming
- Design and Architecture
-- STT-MRAM Cell Design
--- 1T-1MTJ
--- 2T-1MTJ
--- Shared Source-Line (-Plane)
-- Selection Device
-- Sensing Schemes
--- Data Retention Relaxation
- Racetrack Memory

MTJ in non-volatile logic
- Introduction
- Non-volatile Latch/Flip-Flop
- Non-volatile Adder
- Non-volatile Look-up Table (LUT)
- Spin-logic

MRAM Fabrication
- Process flow
- Element shape
- 3D Integration
- MRAM Cost Drivers
-- Process Complexity
-- Cell Efficiency
-- Yield
-- Cost per Bit

Memory Comparison
- MRAM Characteristics
-- Switching Time
-- Current / Power Consumption
-- Retention Time
-- Endurance and Wear Leveling
-- ECC
-- Scaling
- MRAM vs. DRAM
- MRAM vs. Flash
- MRAM vs. SRAM
- MRAM vs. FeRAM
- MRAM vs. PCM

Roadmap

MRAM Status
- Aeroflex, Inc.
- Avalanche Technology
- Crocus Technology
- Everspin Technologies, Inc.
- Freescale Semiconductor
- Hitachi Ltd.
- Honeywell International, Inc.
- IBM Corp.
- Infineon Technologies AG
- Intel Corp.
- Magsil Corporation
- Micromem Technologies, Inc.
- Micron Technology
- NEC Corp.
- NVE Corp.
- Qualcomm, Inc.
- Renesas Technology
- Samsung Electronics
- SK Hynix Semiconductor
- Spin Transfer Technologies
- Spingate Technology LLC
- SPINTEC
- ST Microelectronics
- Taiwan Semiconductor Manufacturing Company
- Toshiba Corp.
- Tower Semiconductor Ltd.

Market and Applications
- Introduction
- Embedded MRAM Market
-- Requirement For Successful eMRAM Market Entry
--- Processor Companion Devices with Battery-backed SRAM and Real-time Clock
--- Set-top box MCU using EEPROM or Battery-Backed SRAM
--- RF ID Devices, Smartcards, and e-Passports
--- Smart Meters
--- Mobile Baseband SOCs
--- Mobile Application Processor SoCs
-- Embedded nvRAM Market Forecast
--- BB-SRAM
--- FERAM
--- nvSRAM
--- MRAM
--- Market for nvRAM Product Revenue by Technology
-- Embedded MRAM Market and Applications Outlook
- Standalone MRAM Market
-- Memory Market Segmentation Based Upon Price/Bit and Feature Sets Differentiation
- MRAM as an SRAM Replacement
- MRAM as a Non-volatile RAM
-- RAID Write Index Application
-- SmartMeter Datalog Application
-- Other nvRAM Applications
- MRAM as a DRAM Replacement
-- High Density DRAM-compatible MRAM Applications
--- Instant-on Embedded Controller Memory
--- RAID Non-volatile Cache Memory
--- HDD Non-volatile Buffer Memory
--- Enterprise SSD Metadata Cache/Buffer
--- Mobile Chipset Memory
- MRAM as a Storage Class Memory
-- Standalone MRAM Market and Applications Summary

References

About the Authors

About Forward Insights
- Services
- Contact

About NamLab

Contact

- Aeroflex, Inc.
- Avalanche Technology
- Crocus Technology
- Everspin Technologies, Inc.
- Freescale Semiconductor
- Hitachi Ltd.
- Honeywell International, Inc.
- IBM Corp.
- Infineon Technologies AG
- Intel Corp.
- Magsil Corporation
- Micromem Technologies, Inc.
- Micron Technology
- NEC Corp.
- NVE Corp.
- Qualcomm, Inc.
- Renesas Technology
- Samsung Electronics
- SK Hynix Semiconductor
- Spin Transfer Technologies
- Spingate Technology LLC
- SPINTEC
- ST Microelectronics
- Taiwan Semiconductor Manufacturing Company
- Toshiba Corp.
- Tower Semiconductor Ltd.

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