Comparison of 3-bit per cell NAND Flash Memories

  • ID: 1070988
  • Report
  • Region: Global
  • 54 Pages
  • Forward Insights
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This report compares the 3-bit per cell NAND flash memory architectures and key parameters of SanDisk/Toshiba, Hynix and Samsung and analyzes the advantages and disadvantages of each implementation.
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Executive Summary
- Introduction
- Three-bit per cell NAND Flash Memories
- SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND Flash Memory
- Summary
- Page Buffer
- Page Organization
- Cache algorithms
- Source Line Bias Error Compensation
- Power Routing Organization
- Data Path
- All Bitline vs. Interleaved Architecture
- Program Speed
- ABL - Considerations on Scalability
- Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory
- Summary
- Chip Architecture
- Pass Bit Detector Circuits
- Smart Blind Program Algorithm
- Start Bias Controlled Program Algorithm
- 32Gb 32nm 3-bit/cell SanDisk/Toshiba
- Summary
- Chip Architecture
- Program Verify Read Before Programming
- Compact Row Decoder
- Extended Column Architecture
- Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory
- Summary
-- References
-- About the Author
-- About Forward Insights
-- Services
-- Contact
-- Report Offerings

List of Figures

- NAND Flash Areal Storage Density Trend
- ISPP for 2-bit and 3-bit per cell Technology
- ABL architecture
- Page Organization and Programming
- Conventional Cache Program
- FSC +MCR
- Source line Bias Error: Ideal Case
- Source line Bias Error: Real Case
- Source line Bias Error: Source Tracking
- Chip comparison
- Power Bus Routing: 16Gb D2 vs. 16Gb x3 (rotated array)
- Data Path: 16Gb D2 vs 16Gb x3 (rotated array)
- Program speed improvements
- ABL Architecture with 8K Page Size Compared to Interleaved Architecture with 4KB Page Size
- ABL Architecture with 8K Page Size Compared to Interleaved Architecture with 8KB Page Size
- ABL Architecture vs. Interleaved Architecture: Double Sided Page Buffer
- BLC Line Density vs. Core Scalability
- 3-bit/cell NAND Flash Program Time
- Die micrograph of Hynix 32Gb 8LC NAND Flash Memory
- Pass Bit Detector
- Smart Blind Program
- Start Bias Controlled Program
- SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Die Micrograph
- Program Inhibit
- Schematic view of row decoder
- String Organization
- Endurance properties
- Current Degradation due to Series Resistance

List of Tables
- Features Summary of SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND Flash Memory
- ABL vs. Interleaving
- Features Summary of Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory
- Features Summary of SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Memory
- Features Summary of Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory
- Key Parameters Comparison
- Key Features and Advantages & Disadvantages of SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND Flash Memory
- Key Features and Advantages & Disadvantages of Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory
- Key Features and Advantages & Disadvantages of SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Memory
- Key Features and Advantages & Disadvantages of Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory
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