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Silicon Carbide, Volume 2. Power Devices and Sensors

  • ID: 1265851
  • Book
  • 520 Pages
  • John Wiley and Sons Ltd
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Silicon Carbide – this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high–powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles.

This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC–based electronics for automotive industry as well as SiC–based circuit elements for high temperature applications, and the application of transistors in PV–inverters.

The list of contributors reads like a "Who′s Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

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1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices

2) Silicon Carbide power devices –

Status and upcoming challenges with a special attention to industrial application

3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts

4) Reliability aspects of SiC Schottky Diodes

5) Design, process, and performance of all–epitaxial normally–off SiC JFETs

6) Extreme Temperature SiC Integrated Circuit Technology

7) 1200 V SiC Vertical–channel–JFET based cascode switches

8) Alternative techniques to reduce interface traps in n–type 4H–SiC MOS capacitors

9) High electron mobility ahieved in n–channel 4H–SiC MOSFETs oxidized in the presence of nitrogen

10) 4H–SiC MISFETs with Nitrogen–containing Insulators

11) SiC Inversion Mobility

12) Development of SiC diodes, power MOSFETs and intellegent Power Modules

13) Reliability issues of 4H–SiC power MOSFETs toward high junction temperature operation

14) Application of SiC–Transistors in Photovoltaic–Inverters

15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs

16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H–SiC BJTs

17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar–blind light detection

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Peter Friedrichs
Tsunenobu Kimoto
Lothar Ley
Gerhard Pensl
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