- Provides basic knowledge of ion implantation-induced defects- Focuses on physical mechanisms of defect annealing- Utilizes electrical, physical, and optical characterization tools for processed semiconductors- Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
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Optical Characterization M Fried, T. Lohner, and J. Gyulai, Ellipsometric Analysis A. Seas and C. Christofides, Transmission and Reflection Spectoscopy on Ion Implanted Semiconductors A. Othonos, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors: Influence of Annealing
Thermal Wave Analyses C. Cristofides, Photomodulated Thermoreflectance Investigation of Implanted Wafers: Annealing Kinetics of Defects U. Zammit, Photothermal Delection Spectroscopy Characterization of Ion-Implanted and Annealed Si Films A. Mandelis, A. Budiman, and M. Vargas, Photothermal Deep Level Transient Spectroscopy of Impurities and Defects in Semiconductors
Quantum Well Structures and Compound Systems R. Kalish and S. Charbonneau, Ion Implantation into Quantum Well Structures A.M. Myasnikov and N.N. Gerasimenko, Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors