The problem of instabilities is addressed in this volume, the third of this book series.
Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.
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Additions and Updates to Volumes 1 & 2. Silica, silicon nitride and oxynitride thin films
an overview of fabrication techniques, properties and applications (B. Balland, A. Glachant). A review of buried oxide structures and soi technologies (J.L. Leray). Dielectric breakdown in silica
a survey of test methods (D.R. Wolters, J.F. Verwey, T.A. Zegers-Van Duijnhoven). Hot carrier injections in silica and related instabilities in submicrometer mosfets (D. Vuillaume). Multilayer dielectrics for memory applications ((P. Gentil). Charge pumping techniques
their use for diagnosis and interface state studies in MOS transistors ((J.L. Autran, B. Balland, G. Barbottin). The study of thermal nitridation and reoxidation mechanisms using isotopic tracing methods (J.J. Ganem, I.J. Baumvol). Part II
Silicon Devices in Radiation Environments. The space radiation environment (D. Bräunig). An overview of radiation-matter interactions (W.R. Fahrner). Radiation effects in electronic components (D. Bräunig, F. Wulf). Defects and radiation
induced charge trapping phenomena in silica (P. Pailet, J.L. Leray). The effects of cosmic ions on electronic components (O. Musseau). Author index. Subject index.