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Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Volume 163. MRS Proceedings

  • ID: 2129047
  • Book
  • June 1990
  • Region: Global
  • 1086 Pages
  • Cambridge University Press
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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Preface; Acknowledgments; Materials Research Society symposium proceedings;

Part I - Electronic Structure - Deep Levels;

Part II - Electronic Structure - Shallow Impurities;

Part III - Electronic Structures - Native Defects, Complexes, Transition Metals in Compounds;

Part IV - Electronic Structure - Complexes in Silicon;

Part V - Electronic Structure - Superlattices;

Part VI - Hydrogen in Silicon;

Part VII - Hydrogen in III-Vs;

Part VIII - Diffusion in Silicon and Germanium;

Part IX - Diffusion in Compounds;

Part X - Diffusion in Superlattices;

Part XI - DX Centers;

Part XII - EL2 Centers;

Part XIII - Doping in III-Vs;

Part XIV - Ordering in Alloys;

Part XV - Processing of Silicon and Germanium;

Part XI - Processing of Compounds; Author index; Subject index.
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Donald J. Wolford IBM T J Watson Research Center, New York.

Jerzy Bernholc North Carolina State University.

Eugene E. Haller University of California, Berkeley.
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