Low Energy Ion Beam and Plasma Modification of Materials: Volume 223. MRS Proceedings

  • ID: 2129096
  • Book
  • 418 Pages
  • Cambridge University Press
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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Part I - Fundamentals of Ion-Material Interactions;

Part II - Microwave Ion Sources for Deposition and Etching;

part I - Fabrication processes and physical properties T. T. Chau, S. R. Mejia and K. C. Kao;
11. Structural and interfacial characteristics of thin (<10 nm) SiO2 films grown by electron cyclotron resonance plasma oxidation on [100] si substrates Tai D. Nguyen, D. A. Carl, D. W. Hess, M. A. Lieberman and R. Gronsky;
12. Cubic brown nitride prepared by an ECR plasma Y. Osaka, M. Okamoto and Y. Utsumi;
13. The ECR-plasma deposition of silicon nitride on a tunnel oxide J. C. Barbour, H. J. Stein and C. A. Outten;
14. ECR plasma etching technology for ULSIs Seiji Samukawa;
15. The mechanisms of reactive ion etching of SiOx (x<2) with electron cyclotron resonance and Kaufman ion sources R. A. Kant, C. R. Eddy, Jr, and B. D. Sartwell;
16. Shallow p+-n junction fabrication by plasma immersion ion implantation C. A. Pico, X. Y. Qian, E. Jones, M. A. Lieberman and N. W. Chang;
17. Electron cyclotron resonance hydrogenation of poly-si thin film transistors on SiO2/Si substrates Gand Liu, Robert A. Ditizio, Stephen J. Fonash and Nang Tran;
18. Electron cyclotron resonance hydrogen plasma induced defects in thermally grown and sputter depositied SiO2 W. L. Hallett, R. A. Ditizio and S. J. Fonash;

Part III - Processing of High Tc Thin Films and Interfaces;

Part III - Processing of High Tc Thin Films and Interfaces;

Part IV - Electronic Materials;

Part V - Electronic Materials;

Part VI - Ion Processing of Oxides, Nitrides, Polymers and Carbon;

Part VII - Ion Processing of Metals.
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James M. E. Harper IBM T J Watson Research Center, New York.

Kiyoshi Miyake
John R. McNeil University of New Mexico.

Steven M. Gorbatkin
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