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Ferroelectric Thin Films IV: Volume 361. MRS Proceedings

  • ID: 2129200
  • Book
  • August 1995
  • Region: Global
  • 623 Pages
  • Cambridge University Press
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This book represents the latest technical information from academia, government organizations and industry on ferroelectric thin films. Highlights can be separated into four major categories: the first public technical disclosure of the materials processing and characterization of the much-acclaimed 'Y1' nonvolatile memory material; enhanced understanding of the role of electronic and ionic defects in ferroelectric thin film degradation; extensive technical progress in metalorganic chemical vapor deposition of ferroelectric thin films; and the development of enhanced process integration techniques for ferroelectric thin films with semiconductor technology. In addition, improved process technologies that are bringing the optical properties of these complex, multicomponent oxide films to the verge of commercial viability, are discussed. Topics include: layered structure ferroelectrics; characterization; photonic phenomena; process integration issues; dram thin film technology; chemical vapor deposition; solution deposition; vapor deposition; pulsed laser deposition and piezoelectric and IR thin film technology.
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Seshu B. Desu
R. Ramesh
T. Shiosaki Kyoto University, Japan.

Bruce A. Tuttle
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