Materials Reliability in Microelectronics V: Volume 391. MRS Proceedings

  • ID: 2129222
  • Book
  • 523 Pages
  • Cambridge University Press
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This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
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William F. Filter
Kamesh Gadepally
A. Lindsay Greer University of Cambridge.

Anthony S. Oates AT&T Bell Laboratories, New Jersey.

Robert Rosenberg IBM T J Watson Research Center, New York.
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