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Ferroelectric Thin films V: Volume 433. MRS Proceedings

  • ID: 2129258
  • Book
  • November 1996
  • Region: Global
  • 449 Pages
  • Cambridge University Press
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This book features worldwide advancements that have been made in both the processing technology and fundamental understanding of ferroelectric thin films. There is a strong emphasis on process integration issues and on gaining an enhanced understanding of the behavior of layered structure perovskites for nonvolatile memory applications. The book also addresses the processing of high-dielectric constant thin films for dynamic random-access memory applications, especially by plasma-assisted metalorganic chemical vapor deposition. The development of electrode-processing techniques for improved properties, the role of defects in ferroelectric thin-film degradation, structure-property relationships, domains and size effects in ferroelectric thin films, and the pyroelectric, optical and field effect device applications of these materials are also highlighted. The perspectives of ARPA and ONR on the future of ferroelectric technologies are noted.
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Seshu B. Desu
Robert E. Jones
R. Ramesh University of Maryland, College Park.

Bruce A. Tuttle
In K. Yoo
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