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Gallium Nitride and Related Materials II: Volume 468. MRS Proceedings

  • ID: 2129291
  • Book
  • 526 Pages
  • Cambridge University Press
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This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
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C. R. Abernathy University of Florida.

H. Amano Meijo University, Japan.

J. C. Zolper
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