Defects and Diffusion in Silicon Processing: Volume 469. MRS Proceedings

  • ID: 2129292
  • Book
  • 541 Pages
  • Cambridge University Press
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A strong effort is has been devoted to the investigation of defects and diffusion phenomena in silicon. This effort is not only driven by the stringent technological requirements for the processing of integrated circuits of increased complexity and miniaturization, but also by the lack of fundamental understanding of many of the critical parameters and mechanisms involved. Experimental and theoretical investigations are needed to identify the properties of the defects, the mechanisms of impurity diffusion and the strength of impurity-defect, defect-defect, and impurity-impurity interactions. This book provides a unique and interdisciplinary forum for the discussion of experimental, theoretical and applied aspects of defects and diffusion phenomena in silicon. Topics include: defect properties and diffusion phenomena in silicon; experimental and theoretical assessments of defect properties; transient-enhanced diffusion and dopant clustering; damage evolution and extended defects and gettering procedures.
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Tomas Diaz de la Rubia Lawrence Livermore National Laboratory, California.

Salvatore Coffa
Conor S. Rafferty
Peter A. Stolk Philips Research Laboratories, The Netherlands.
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