Nitride Semiconductors: Volume 482. MRS Proceedings

  • ID: 2129304
  • Book
  • 1224 Pages
  • Cambridge University Press
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This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.
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F. A. Ponce Xerox Palo Alto Research Center, Stanford University, California.

S. P. DenBaars University of California, Santa Barbara.

B. K. Meyer Justus-Liebig-Universität Giessen, Germany.

S. Nakamura
S. Strite
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