Si Front-End Processing: Volume 669. Physics and Technology of Dopant-Defect Interactions III. MRS Proceedings

  • ID: 2129463
  • Book
  • 358 Pages
  • Cambridge University Press
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This book focuses on the phenomena which control the three-dimensional dopant profile in deep submicron devices. As device sizes continue to shrink, increasing the dopant activation while simultaneously decreasing the junction depth requires increasing control and understanding of dopant movement. As dopant diffusion and activation are determined by interactions with defects, other atoms, and interfaces, control of dopant behavior requires specific knowledge of these processes. To take advantage of atomistic simulation methods that can be used to model not only the dopant behaviors but now the properties of whole devices, high-precision advanced characterization techniques (e.g., two-dimensional junction profiling) are essential. These problems provide an excellent opportunity for researchers to share experimental results and physical models, demonstrate their importance to the technologies and identify key issues for future research in this field. Topics include: future device issues; advances in dopant profiling; dopant diffusion issues; dopant-defect clustering; dopant impurity effects; laser annealing; advances in RTA and simulation and modeling.
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Erin C. Jones IBM T J Watson Research Center, New York.

Kevin S. Jones University of Florida.

Martin D. Giles
Peter Stolk
Jiro Matsuo Kyoto University, Japan.
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