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Quantum Confined Semiconductor Nanostructures: Volume 737. MRS Proceedings

  • ID: 2129505
  • Book
  • April 2003
  • 862 Pages
  • Cambridge University Press
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Progress in nanoscale engineering, as well as an improved understanding of the physical phenomena at the nanometer scale, have contributed to the rapid development of novel nanostructured semiconducting materials and nanodevices. Using new approaches, semiconductor structures can be fabricated with sub-nanometer accuracy and precisely controlled electronic and optical properties. The immense technological potential and new exciting physics have stimulated interest in semiconductor nanostructures over several years. This book brings together a single comprehensive overview of recent progress and future directions in nanoscale semiconductor research. Fields ranging from materials science to physics, chemistry, electrical and microelectronic engineering, circuit design, and more, are represented. Topics include: quantum dot theory, growth and optics; single quantum dot spectroscopy; charge and spin; Si/Ge quantum dot structures; bio-quantum dots; electric force microscopy and charge injection; transport; Si nanocrystals and nc-Si superlattices; Si/Ge nanostructures; bioactive nanostructures; lithographic techniques and lateral nanopatterning; semiconductor nanowires and nanotubes; metallic and rare-earth-doped nanoparticles; theoretical studies and numerical simulations in Si/SiGe nanostructures and applications of Group IV nanoscale materials.
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Victor I. Klimov Los Alamos National Laboratory.

Jillian M. Buriak Purdue University, Indiana.

Danial M. Wayner
Francesco Priolo Università degli Studi di Catania, Italy.

Bruce White
Leonid Tsybeskov New Jersey Institute of Technology.
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