High-Mobility Group-IV Materials and Devices: Volume 809. MRS Proceedings

  • ID: 2129551
  • Book
  • 324 Pages
  • Cambridge University Press
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In the ever more-demanding quest for increased performance in the microelectronics industry, device concepts such as fully depleted SOI MOSFETs and multiple-gate structures are probably the last step in plain Si technology. In order to keep pace with Moore's law, materials that show enhanced carrier mobilities for both holes and electrons are needed in order to enhance drive in both low-power and high-performance MOS applications. It is clear that the semiconductor community is considering the use of strained layers of SiGe and Si in their most advanced MOS device concepts. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator. Topics include: strained Si and SRBs on bulk Si; strained Si and SRBs on insulator; characterization and defects in strained layers; Ge substrates; strained Si and SiGe devices; doping and diffusion on Group-IV materials; and SiGe layers and high-k and high-mobility substrates.
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Matty Caymax
Ken Rim IBM T J Watson Research Center, New York.

Shigeaki Zaima Nagoya University, Japan.

Erich Kasper Universität Stuttgart.

Paulo F. P. Fichtner Universidade Federal do Rio Grande do Sul, Brazil.
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