GaN, AIN, InN and their Alloys: Volume 831. MRS Proceedings

  • ID: 2129563
  • Book
  • 784 Pages
  • Cambridge University Press
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This book discusses GaN and Related Alloys and reflects an emerging emphasis on the binaries of InN and AlN. The major thrust here is the topical development of thin-film growth, bulk growth techniques, methods to cover the full ternary and quaternary alloy ranges toward InN and AlN and their characterization; strategies for structural defect reduction and their characterization; ways to better control p-type doping and its characterization; device and defect physics, including polarization effects; physics of surfaces and interfaces; and device processing techniques. In addition, advances in MBE devices, high-power electronics, RF performance of electronics, UV emitters, high-efficiency light emitters, photo and chemical sensors, as well as new applications within the group-III nitrides, are also covered. The book captures the current status of this field and will be useful for researchers working with group-III nitrides, as well as for students who seek entry into this subject.
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Christian Wetzel Rensselaer Polytechnic Institute, New York.

Bernard Gil Université de Montpellier II.

Masaaki Kuzuhara Fukui University, Japan.

Michael Manfra
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