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Semiconductor Defect Engineering: Volume 864. Materials, Synthetic Structures and Devices. MRS Proceedings

  • ID: 2129580
  • Book
  • July 2005
  • 632 Pages
  • Cambridge University Press
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This book, first published in 2005, explores the deliberate introduction and manipulation of defects and impurities for the purpose of engineering desired properties in semiconductor materials and devices. The presentations are grouped around the distinct topics of materials, processing and devices. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects and their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. Most of the papers deal with dopant and defect issues relevant to widegap semiconductors. The scope of defect and impurity engineering is far-ranging, as exemplified by phase and morphological stability of silicides, interface control and passivation, and application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels. Papers in these areas are also found in the book.
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S. Ashok Pennsylvania State University.

J. Chevallier
B. L. Sopori National Renewable Energy Laboratory, Golden, Colorado.

M. Tabe Shizuoka University, Japan.

P. Kiesel
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