Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates: Volume 1068. MRS Proceedings

  • ID: 2129628
  • Book
  • 289 Pages
  • Cambridge University Press
1 of 3
To meet increasingly challenging and complex system requirements, as well as to stay cost effective, it is not enough to use one single semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing attributes with the superior performance attributes of compound semiconductors (CS). Such a combination will enable performance superior to that achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon substrates indicates the worldwide importance of these materials and devices. This book represents the latest technical advancements and information on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integration techniques; conventional III-V materials and devices on silicon; and silicon and other materials on silicon.
Note: Product cover images may vary from those shown
2 of 3

Loading
LOADING...

3 of 3
Tingkai Li
Joan M. Redwing Pennsylvania State University.

Michael Mastro
Edwin L. Piner
Armin Dadgar Otto-von-Guericke-Universität Magdeburg, Germany.
Note: Product cover images may vary from those shown
4 of 3
Note: Product cover images may vary from those shown
Adroll
adroll