Doping Engineering for Front-End Processing: Volume 1070. MRS Proceedings

  • ID: 2129630
  • Book
  • 319 Pages
  • Cambridge University Press
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Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
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B. J. Pawlak
M. L. Pelaz Universidad de Valladolid, Spain.

M. Law University of Florida.

K. Surugo
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