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CMOS Gate-Stack Scaling — Materials, Interfaces and Reliability Implications: Volume 1155. MRS Proceedings

  • ID: 2129653
  • Book
  • 194 Pages
  • Cambridge University Press
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To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.
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Alexander A. Demkov University of Texas, Austin.

Bill Taylor
H. Rusty Harris Texas A & M University.

Jeffery W. Butterbaugh
Willy Rachmady
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