+353-1-416-8900REST OF WORLD
+44-20-3973-8888REST OF WORLD
1-917-300-0470EAST COAST U.S
1-800-526-8630U.S. (TOLL FREE)


Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics — 2011: Volume 1335. MRS Proceedings

  • ID: 2129730
  • Book
  • November 2011
  • 140 Pages
  • Cambridge University Press
1 of 3
This volume includes selected papers based on the presentations given at Symposium O, 'Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics', held at the April 25−29, 2011 MRS Spring Meeting in San Francisco, California. The symposium included topics relating to low-k dielectrics, integration, reliability, metallization, packaging and emerging technologies.
Note: Product cover images may vary from those shown
2 of 3
Part I - Low-k Materials:
1. Ultra low-k materials based on self-assembled organic polymers Marianna Pantouvaki;
2. New designs of hydrophobic and mesostructured ultra low k materials with isolated mesopores Anthony Grunenwald;
3. Evaluation of ultra-thin layer fabricated by wet-process as a pore-seal for porous low-k films Shoko Ono;
4. Ozone treatment on nanoporous ultralow dielectric materials to optimize their mechanical and dielectrical properties Hee-Woo Rhee;

Part II - Integration:
5. Optimizing stressor film deposition sequence in polish rate order for best planarization John H. Zhang;
6. Effect of chemical solutions and surface wettability on the stability of advanced porous low-k materials Quoc Toan Le;
7. A less damaging patterning regime for a successful integration of ultra low-k materials in modern nanoelectronic devices Sven Zimmermann;
8. Defects in low-ĸ insulators (ĸ=2.5–2.0): ESR analysis and charge injection Valeri Afanas'ev;
9. Patterning organic fluorescent molecules with SAM patterns Nan Lu;
10. Optical interconnect technologies based on silicon photonics Wim Bogaerts;

Part III - Metallization:
11. 32nm node highly reliable Cu/low-k integration technology with CuMn alloy seed Shaoning Yao;
12. Amorphous Ta-N as a diffusion barrier for Cu metallization Neda Dalili;
13. Comparison of TiN thin films grown on SiO2 by reactive dc magnetron sputtering and high power impulse magnetron sputtering Jon Gudmundsson;
14. Specific contact resistance of ohmic contacts on n-type SiC membranes Patrick Leech;
15. Development of electrochemical copper deposition screening methodologies for next generation additive selection Kevin Ryan;

Part IV - 3D Packaging:
16. Microbump impact on reliability and performance in through-silicon via stacks Aditya Karmarkar;
17. Tailoring the crystallographic texture and electrical properties of inkjet-printed interconnects for use in microelectronics Romain Cauchois.
Note: Product cover images may vary from those shown
3 of 3


4 of 3
Mikhail R. Baklanov
Geraud Dubois
Christian Dussarrat
Terukazu Kokubo
Shinichi Ogawa
Note: Product cover images may vary from those shown